Title :
High-power InAs/InGaAs type-II QW lasers grown on GaAs alternative substrate
Author :
Murry, S.J. ; Vilela, M.F. ; Sooriar, N. ; Anselm, K.A. ; Lin, C.-H.
Author_Institution :
Appl. Optoelectron. Inc., Sugar Land, TX, USA
Abstract :
This paper presents the results on wafer fusion (GaAs on InP) with a consequent film transfer (InGaAs) from one substrate (InP) to the other (GaAs). This technique of film transfer has permitted a subsequent epitaxial growth of materials with more than 7% of lattice mismatch. A high performance device quantifies the quality of the material grown. The device consisted of 60 periods of InAs/InGaSb/InAs/AlSb type-II quantum wells forming a mid-infrared (MIR) laser. The InGaAs-GaAs alternative substrate allowed the device to be pumped from its backside with a 980 nm diode laser array. Peak MIR (λ=4.6 μm) power output under 10 μs pulses was over 350 mW per facet. With a 500 μs pulse length and 500 Hz repetition rate, the device produced over 220 mW of quasi-cw output power at 80 K
Keywords :
III-V semiconductors; MOCVD; gallium arsenide; indium compounds; optical pumping; quantum well lasers; semiconductor growth; semiconductor superlattices; vapour phase epitaxial growth; wafer bonding; 10 mus; 220 mW; 350 mW; 4.6 mum; 500 Hz; 500 mus; 80 K; 980 nm; AlSb; GaAs; GaAs alternative substrate; InAs-InGaAs; InAs/InGaSb/InAs/AlSb type-II quantum wells; InGaAs; InP; backside pumping; diode laser array; epitaxial growth; film transfer; high-power InAs/InGaAs type-II QW lasers; lattice mismatch; mid-infrared laser; pulse length; quasi-cw output power; repetition rate; wafer fusion; Epitaxial growth; Gallium arsenide; Indium gallium arsenide; Indium phosphide; Laser fusion; Lattices; Optical materials; Pump lasers; Semiconductor laser arrays; Substrates;
Conference_Titel :
Compound Semiconductors, 2000 IEEE International Symposium on
Conference_Location :
Monterey, CA
Print_ISBN :
0-7803-6258-6
DOI :
10.1109/ISCS.2000.947187
