Title :
High-power operation of a 660-nm-band self-aligned stepped substrate laser
Author :
Anayama, C. ; Sugiura, K. ; Furuya, A. ; Tanahashi, T.
Author_Institution :
Fujitsu Quantum Devices Ltd., Atsugi, Japan
Abstract :
We have developed a high-power 660-nm-band Self-aligned Stepped Substrate (S3) laser having good beam characteristics. We checked and found the characteristic temperature of the laser was improved bp increasing the Zn concentration and thickness of a p-cladding layer located between an active layer and a blocking layer. The laser has a characteristic temperature of about 100 K, a beam aspect ratio of 1.3, and reliable pulse operation of 1000 hours at 70°C and 70 mW
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; gallium compounds; indium compounds; quantum well lasers; semiconductor device measurement; zinc; 100 K; 1000 h; 660 nm; 70 C; 70 mW; AlGaInAsP:Zn; Zn concentration; active layer; beam aspect ratio; beam characteristics; blocking layer; characteristic temperature; high-power operation; p-cladding layer; reliable pulse operation; self-aligned stepped substrate laser; thickness; DVD; Epitaxial growth; Epitaxial layers; Laser beams; Manufacturing; Optical pulses; Substrates; Temperature; Vision defects; Zinc;
Conference_Titel :
Compound Semiconductors, 2000 IEEE International Symposium on
Conference_Location :
Monterey, CA
Print_ISBN :
0-7803-6258-6
DOI :
10.1109/ISCS.2000.947189
