High-power operation of a 660-nm-band self-aligned stepped substrate laser

Author

Anayama, C. ; Sugiura, K. ; Furuya, A. ; Tanahashi, T.

Author_Institution

Fujitsu Quantum Devices Ltd., Atsugi, Japan

fYear

2000

fDate

2000

Firstpage

401

Lastpage

406

Abstract

We have developed a high-power 660-nm-band Self-aligned Stepped Substrate (S³) laser having good beam characteristics. We checked and found the characteristic temperature of the laser was improved bp increasing the Zn concentration and thickness of a p-cladding layer located between an active layer and a blocking layer. The laser has a characteristic temperature of about 100 K, a beam aspect ratio of 1.3, and reliable pulse operation of 1000 hours at 70°C and 70 mW

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; gallium compounds; indium compounds; quantum well lasers; semiconductor device measurement; zinc; 100 K; 1000 h; 660 nm; 70 C; 70 mW; AlGaInAsP:Zn; Zn concentration; active layer; beam aspect ratio; beam characteristics; blocking layer; characteristic temperature; high-power operation; p-cladding layer; reliable pulse operation; self-aligned stepped substrate laser; thickness; DVD; Epitaxial growth; Epitaxial layers; Laser beams; Manufacturing; Optical pulses; Substrates; Temperature; Vision defects; Zinc;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductors, 2000 IEEE International Symposium on

Conference_Location

Monterey, CA

Print_ISBN

0-7803-6258-6

Type

conf

DOI

10.1109/ISCS.2000.947189

Filename

947189