Title :
The influence of rapid thermal annealing on InAsP/InP strained multiple quantum well laser diodes grown by metalorganic vapor phase epitaxy
Author :
Wang, Wei-Han ; Lee, Chong-Yi ; Tian, Ya-De ; Shih, Tian-Tsorbng
Author_Institution :
Telecommun. Labs., Chunghwa Telecom Co. Ltd., Taoyuan, Taiwan
Abstract :
We have demonstrated that the threshold current of InAsP/InP strained multiple quantum well ridge-waveguide (RWG) LDs decreased significantly by applying an optimal post-growth rapid thermal annealing procedure. It was found that the PL peak wavelengths of the InAsP/InP SSQW stack only slightly shifted of 1-4 nm and the FWHMs remained almost unaffected after 700°C RTA, indicating that interdiffusion of group-V elements did not damage the device structures
Keywords :
III-V semiconductors; MOCVD; chemical interdiffusion; indium compounds; photoluminescence; quantum well lasers; rapid thermal annealing; ridge waveguides; semiconductor growth; semiconductor superlattices; spectral line breadth; spectral line shift; vapour phase epitaxial growth; waveguide lasers; 700 C; FWHM; InAsP-InP; InAsP/InP SSQW stack; InAsP/InP strained multiple quantum well laser diodes; InAsP/InP strained multiple quantum well ridge-waveguide; PL peak wavelengths; RTA; interdiffusion; metalorganic vapor phase epitaxy; optimal post-growth rapid thermal annealing procedure; rapid thermal annealing; threshold current; Conducting materials; Diode lasers; Epitaxial growth; Indium phosphide; Laboratories; Optical materials; Optical waveguides; Rapid thermal annealing; Temperature; Threshold current;
Conference_Titel :
Compound Semiconductors, 2000 IEEE International Symposium on
Conference_Location :
Monterey, CA
Print_ISBN :
0-7803-6258-6
DOI :
10.1109/ISCS.2000.947190
