Evidence for hydrogen-related defects during NBTl stress in p-MOSFETs

Author

Huard, V. ; Monsieur, F. ; Ribes, G. ; Bruyere, S.

Author_Institution

CR&D Labs., Philips Semicond., Crolles, France

fYear

2003

fDate

30 March-4 April 2003

Firstpage

178

Lastpage

182

Abstract

This work gives an insight into the degradation mechanisms during a negative bias instability stress on ultrathin oxides (t_ox=20 Å). The generation of interface traps and oxide defects is shown to impact parameters such as the threshold voltage. Their generation is linked to the release of hydrogen species at the interface according to the hydrogen release model. Only hot holes can be trapped by the anode hole injection phenomenon.

Keywords

MOSFET; hole traps; hot carriers; hydrogen; interface states; leakage currents; semiconductor device reliability; semiconductor device testing; -0.75 to -3.5 V; 20 A; NBTI stress; anode hole injection phenomenon; degradation mechanisms; hole traps; hot holes; hydrogen release model; hydrogen species release; hydrogen-related defects; interface traps; negative bias instability stress; oxide defects; p-MOSFETs; threshold voltage; ultrathin oxides; Current measurement; Degradation; Electrodes; Hot carriers; Hydrogen; MOSFET circuits; Niobium compounds; Stress; Threshold voltage; Titanium compounds;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium Proceedings, 2003. 41st Annual. 2003 IEEE International

Print_ISBN

0-7803-7649-8

Type

conf

DOI

10.1109/RELPHY.2003.1197741

Filename

1197741