Title :
Evidence for hydrogen-related defects during NBTl stress in p-MOSFETs
Author :
Huard, V. ; Monsieur, F. ; Ribes, G. ; Bruyere, S.
Author_Institution :
CR&D Labs., Philips Semicond., Crolles, France
fDate :
30 March-4 April 2003
Abstract :
This work gives an insight into the degradation mechanisms during a negative bias instability stress on ultrathin oxides (tox=20 Å). The generation of interface traps and oxide defects is shown to impact parameters such as the threshold voltage. Their generation is linked to the release of hydrogen species at the interface according to the hydrogen release model. Only hot holes can be trapped by the anode hole injection phenomenon.
Keywords :
MOSFET; hole traps; hot carriers; hydrogen; interface states; leakage currents; semiconductor device reliability; semiconductor device testing; -0.75 to -3.5 V; 20 A; NBTI stress; anode hole injection phenomenon; degradation mechanisms; hole traps; hot holes; hydrogen release model; hydrogen species release; hydrogen-related defects; interface traps; negative bias instability stress; oxide defects; p-MOSFETs; threshold voltage; ultrathin oxides; Current measurement; Degradation; Electrodes; Hot carriers; Hydrogen; MOSFET circuits; Niobium compounds; Stress; Threshold voltage; Titanium compounds;
Conference_Titel :
Reliability Physics Symposium Proceedings, 2003. 41st Annual. 2003 IEEE International
Print_ISBN :
0-7803-7649-8
DOI :
10.1109/RELPHY.2003.1197741
