DocumentCode :
3437578
Title :
Factors determining the external quantum efficiency of AlGaInP microcavity light-emitting diodes
Author :
Royo, P. ; Stanley, R.P. ; Ilegems, M. ; Streubel, K. ; Gulden, K.H.
Author_Institution :
Inst. de Micro- et Optoelectron., Ecole Polytech. Federale de Lausanne, Switzerland
fYear :
2000
fDate :
2000
Firstpage :
425
Lastpage :
429
Abstract :
A detailed study of external quantum efficiency is reported for AlGaInP-based microcavity light-emitting diodes. By comparing numerical simulations with angle-resolved spectral measurements, the extraction efficiency could be accurately determined. This allowed precise calculation of the internal quantum efficiency. By using a simple model, we could identify the contributions of radiative and injection efficiencies to the internal quantum efficiency. We showed that the injection efficiency was limited by poor confinement of the electrons in the active region
Keywords :
Fabry-Perot resonators; III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; light emitting diodes; AlGaInP; LED; angle-resolved spectral measurements; external quantum efficiency; extraction efficiency; injection efficiency; microcavity light-emitting diodes; numerical simulations; radiative efficiency; Current density; Current measurement; Density measurement; Electrons; Fabry-Perot; Light emitting diodes; Mesh generation; Microcavities; Pulse measurements; Spontaneous emission;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Compound Semiconductors, 2000 IEEE International Symposium on
Conference_Location :
Monterey, CA
Print_ISBN :
0-7803-6258-6
Type :
conf
DOI :
10.1109/ISCS.2000.947193
Filename :
947193
Link To Document :
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