DocumentCode :
3437596
Title :
Scalable modeling of Through Silicon Vias up to milimeter-wave frequency
Author :
Kuan-Chung Lu ; Tzyy-Sheng Horng ; Chi-Han Chen ; Chang-Ying Hung ; Pao-Nan Lee ; Meng-Jen Wang ; Chih-Pin Hung ; Ho-Ming Tong
Author_Institution :
Dept. of Electr. Eng., Nat. Sun Yat-Sen Univ., Kaohsiung, Taiwan
fYear :
2012
fDate :
9-11 Dec. 2012
Firstpage :
168
Lastpage :
171
Abstract :
In this study, measurements are made to validate the electrical performance of a Through Silicon Via (TSV) interconnection up to 40GHz, and the results of the wideband scalable model of TSV is proposed and compared with the measured data. Measurement of the TSV structure demonstrates its advantages of low parasitic capacitance and low insertion loss at high frequency.
Keywords :
capacitance; integrated circuit modelling; three-dimensional integrated circuits; interconnection; low insertion loss; low parasitic capacitance; milimeter-wave frequency; scalable modeling; through silicon vias; wideband scalable model; Calibration; Capacitance; Frequency measurement; Integrated circuit modeling; Silicon; Substrates; Through-silicon vias;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electrical Design of Advanced Packaging and Systems Symposium (EDAPS), 2012 IEEE
Conference_Location :
Taipei
Print_ISBN :
978-1-4673-1444-2
Electronic_ISBN :
978-1-4673-1445-9
Type :
conf
DOI :
10.1109/EDAPS.2012.6469406
Filename :
6469406
Link To Document :
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