Laterally complex-coupled DFB-lasers in the 1.55 μm range based on GS-MBE-grown InGaAsP-InP

Author

Hofmann, J. ; Kamp, M. ; Forchel, A. ; Gentner, J.L. ; Goldstein, L.

Author_Institution

Lehrstuhl fur Tech. Phys., Wurzburg Univ., Germany

fYear

2000

fDate

2000

Firstpage

443

Lastpage

448

Abstract

Distributed feedback (DFB) lasers have been fabricated using the concept of lateral complex coupling on InGaAsP/lnP laser structures grown by gas source molecular beam epitaxy. A periodic modulation of the complex refractive index is provided by a metal grating patterned laterally to the ridge. The evanescent field of the light wave couples to the grating, leading to single mode emission. Threshold currents of 20 mA and differential efficiencies of 0.15 W/A were obtained. Sidemode suppression ratios up to 50 dB and single mode output power levels over 15 mW have been achieved with these devices. A maximum small signal bandwidth of 16 GHz was measured

Keywords

III-V semiconductors; chemical beam epitaxial growth; distributed feedback lasers; gallium arsenide; gallium compounds; indium compounds; refractive index; semiconductor epitaxial layers; semiconductor growth; semiconductor lasers; 1.55 mum; InGaAsP-InP; complex refractive index modulation; differential efficiency; distributed feedback lasers; evanescent field; gas source MBE-grown layers; laterally complex-coupled DFB-lasers; metal grating; sidemode suppression ratios; single mode emission; small signal bandwidth; threshold current; Distributed feedback devices; Gas lasers; Gratings; Laser feedback; Laser modes; Molecular beam epitaxial growth; Optical coupling; Power generation; Refractive index; Threshold current;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductors, 2000 IEEE International Symposium on

Conference_Location

Monterey, CA

Print_ISBN

0-7803-6258-6

Type

conf

DOI

10.1109/ISCS.2000.947196

Filename

947196