Title :
Laterally complex-coupled DFB-lasers in the 1.55 μm range based on GS-MBE-grown InGaAsP-InP
Author :
Hofmann, J. ; Kamp, M. ; Forchel, A. ; Gentner, J.L. ; Goldstein, L.
Author_Institution :
Lehrstuhl fur Tech. Phys., Wurzburg Univ., Germany
Abstract :
Distributed feedback (DFB) lasers have been fabricated using the concept of lateral complex coupling on InGaAsP/lnP laser structures grown by gas source molecular beam epitaxy. A periodic modulation of the complex refractive index is provided by a metal grating patterned laterally to the ridge. The evanescent field of the light wave couples to the grating, leading to single mode emission. Threshold currents of 20 mA and differential efficiencies of 0.15 W/A were obtained. Sidemode suppression ratios up to 50 dB and single mode output power levels over 15 mW have been achieved with these devices. A maximum small signal bandwidth of 16 GHz was measured
Keywords :
III-V semiconductors; chemical beam epitaxial growth; distributed feedback lasers; gallium arsenide; gallium compounds; indium compounds; refractive index; semiconductor epitaxial layers; semiconductor growth; semiconductor lasers; 1.55 mum; InGaAsP-InP; complex refractive index modulation; differential efficiency; distributed feedback lasers; evanescent field; gas source MBE-grown layers; laterally complex-coupled DFB-lasers; metal grating; sidemode suppression ratios; single mode emission; small signal bandwidth; threshold current; Distributed feedback devices; Gas lasers; Gratings; Laser feedback; Laser modes; Molecular beam epitaxial growth; Optical coupling; Power generation; Refractive index; Threshold current;
Conference_Titel :
Compound Semiconductors, 2000 IEEE International Symposium on
Conference_Location :
Monterey, CA
Print_ISBN :
0-7803-6258-6
DOI :
10.1109/ISCS.2000.947196
