Fabrication of device-related GaN/(Al,Ga)N heterostructures on SiC(0001) by reactive MBE

Author

Thamm, A. ; Brandt, O. ; Hilsenbeck, J. ; Lossy, R. ; Ploog, K.H.

Author_Institution

Paul-Drude-Inst. fur Festkorperelektronik, Berlin, Germany

fYear

2000

fDate

2000

Firstpage

455

Lastpage

460

Abstract

High quality GaN/(Al,Ga)N based heterostructures have been grown on SiC(0001) by reactive molecular beam epitaxy (RMBE) using ammonia as nitrogen precursor. These multilayer structures exhibit atomically smooth surfaces and abrupt interfaces. Based on this achievement, we study here the capability of RMBE to fabricate devices requiring abrupt interfaces, namely, distributed Bragg reflectors (DBRs) and heterostructure field-effect transistors (HFETs)

Keywords

III-V semiconductors; aluminium compounds; distributed Bragg reflector lasers; field effect transistors; gallium compounds; molecular beam epitaxial growth; semiconductor epitaxial layers; semiconductor growth; semiconductor lasers; wide band gap semiconductors; GaN-AlGaN; SiC; SiC(0001) substrate; abrupt interfaces; ammonia precursor; atomically smooth surfaces; distributed Bragg reflectors; heterostructure FET; heterostructures; multilayer structures; reactive MBE; Buffer layers; Distributed Bragg reflectors; Fabrication; Gallium nitride; Lattices; Mirrors; Molecular beam epitaxial growth; Reflectivity; Substrates; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductors, 2000 IEEE International Symposium on

Conference_Location

Monterey, CA

Print_ISBN

0-7803-6258-6

Type

conf

DOI

10.1109/ISCS.2000.947198

Filename

947198