Title :
Fabrication of device-related GaN/(Al,Ga)N heterostructures on SiC(0001) by reactive MBE
Author :
Thamm, A. ; Brandt, O. ; Hilsenbeck, J. ; Lossy, R. ; Ploog, K.H.
Author_Institution :
Paul-Drude-Inst. fur Festkorperelektronik, Berlin, Germany
Abstract :
High quality GaN/(Al,Ga)N based heterostructures have been grown on SiC(0001) by reactive molecular beam epitaxy (RMBE) using ammonia as nitrogen precursor. These multilayer structures exhibit atomically smooth surfaces and abrupt interfaces. Based on this achievement, we study here the capability of RMBE to fabricate devices requiring abrupt interfaces, namely, distributed Bragg reflectors (DBRs) and heterostructure field-effect transistors (HFETs)
Keywords :
III-V semiconductors; aluminium compounds; distributed Bragg reflector lasers; field effect transistors; gallium compounds; molecular beam epitaxial growth; semiconductor epitaxial layers; semiconductor growth; semiconductor lasers; wide band gap semiconductors; GaN-AlGaN; SiC; SiC(0001) substrate; abrupt interfaces; ammonia precursor; atomically smooth surfaces; distributed Bragg reflectors; heterostructure FET; heterostructures; multilayer structures; reactive MBE; Buffer layers; Distributed Bragg reflectors; Fabrication; Gallium nitride; Lattices; Mirrors; Molecular beam epitaxial growth; Reflectivity; Substrates; Vertical cavity surface emitting lasers;
Conference_Titel :
Compound Semiconductors, 2000 IEEE International Symposium on
Conference_Location :
Monterey, CA
Print_ISBN :
0-7803-6258-6
DOI :
10.1109/ISCS.2000.947198
