Title :
A novel TSV model considering nonlinear MOS effect for transient analysis
Author :
Kuan-Yu Chen ; Yi-An Sheu ; Chi-Hsuan Cheng ; Jyun-Hong Lin ; Yih-Peng Chiou ; Tzong-Lin Wu
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
Abstract :
A novel equivalent circuit model of through-silicon via (TSV) considering the time-dependent capacitance due to metal-oxide-semiconductor (MOS) effect has been proposed. This model can characterize the variance of capacitance between metal and silicon substrate caused by the differential change of depletion region width as the voltage applied on the TSV changes with time. Compared to conventional TSV models, the capacitance has a 70% difference when the TSV´s applied voltage transits from low state to high state. Besides, 3% difference of eye height and 100% difference of eye jitter can be observed in eye diagram by SPICE simulation.
Keywords :
equivalent circuits; integrated circuit modelling; three-dimensional integrated circuits; transient analysis; SPICE simulation; TSV model; depletion region width; equivalent circuit model; eye diagram; eye height; eye jitter; metal oxide semiconductor effect; metal substrate; nonlinear MOS effect; silicon substrate; through-silicon via; time-dependent capacitance; transient analysis; Analytical models; Capacitance; Equivalent circuits; Integrated circuit modeling; Silicon; Substrates; Through-silicon vias; MOS capacitance; Three dimensional IC (3-D IC); deep depletion; depletion effect; through-silicon via (TSV); time-dependent; transient analysis; transit time;
Conference_Titel :
Electrical Design of Advanced Packaging and Systems Symposium (EDAPS), 2012 IEEE
Conference_Location :
Taipei
Print_ISBN :
978-1-4673-1444-2
Electronic_ISBN :
978-1-4673-1445-9
DOI :
10.1109/EDAPS.2012.6469413
