Title :
Impact of scaling on the high current behavior of RF CMOS technology
Author :
Boselli, Gianluca ; Reddy, Vijay ; Duvvury, Charvaka
Author_Institution :
Silicon Technol. Dev., Texas Instrum. Inc., Dallas, TX, USA
fDate :
30 March-4 April 2003
Abstract :
In this paper the impact of the starting material resistivity on the ESD, latch-up and BVii sensitivity is investigated for a sub-0.1 μm fully silicided CMOS technology for low power and RF applications. The mechanisms through which a substrate spreading resistance increase enhances the uniformity of the ESD current in nMOS protection methods are investigated in detail.
Keywords :
CMOS integrated circuits; MOSFET; electrostatic discharge; integrated circuit reliability; low-power electronics; protection; radiofrequency integrated circuits; semiconductor device breakdown; 90 nm; ESD current uniformity; RF CMOS technology; breakdown voltage injection induced sensitivity; high current behavior; latch-up; low power applications; nMOS protection methods; scaling; starting material resistivity; sub-0.1 μm fully silicided CMOS technology; substrate spreading resistance increase; CMOS technology; Conductivity; Electrostatic discharge; Equations; Instruments; MOS devices; MOSFETs; Materials testing; Radio frequency; Silicon;
Conference_Titel :
Reliability Physics Symposium Proceedings, 2003. 41st Annual. 2003 IEEE International
Print_ISBN :
0-7803-7649-8
DOI :
10.1109/RELPHY.2003.1197750
