Title :
Internal behavior of BCD ESD protection devices under very-fast TLP stress
Author :
Blaho, M. ; Pogany, Dionyz ; Gornik, E. ; Zullino, Lucia ; Morena, E. ; Stella, Roberto ; Andreini, Antonio
Author_Institution :
Inst. for Solid State Electron., Vienna Univ. of Technol., Austria
fDate :
30 March-4 April 2003
Abstract :
BCD electrostatic discharge (ESD) protection npn devices with and without a sinker are analyzed experimentally and by device simulation. The device internal thermal and free carrier density distributions during vf-TLP and TLP stresses are studied by a backside transient interferometric mapping technique. Experimentally observed activity of lateral and vertical parts of the npn transistor are well reproduced by the simulation.
Keywords :
electron density; electrostatic discharge; failure analysis; high-speed techniques; light interferometry; power bipolar transistors; protection; pulse measurement; semiconductor device models; semiconductor device reliability; semiconductor device testing; temperature distribution; BCD ESD protection devices; BCD electrostatic discharge protection npn devices; backside transient interferometric mapping technique; charged device model; device simulation; internal behavior; internal free carrier density distributions; internal thermal distributions; npn transistor; optical interferometry; sinker; very-fast TLP stress; very-fast transmission line testing; Analytical models; Biological system modeling; Electrostatic discharge; Electrostatic interference; Internal stresses; Optical interferometry; Optical pulses; Power system transients; Protection; Thermal stresses;
Conference_Titel :
Reliability Physics Symposium Proceedings, 2003. 41st Annual. 2003 IEEE International
Print_ISBN :
0-7803-7649-8
DOI :
10.1109/RELPHY.2003.1197751
