Title :
Low temperature transport of n-type gallium nitride
Author :
Chong, G. ; Reed, M.A. ; Gaffey, B. ; Gheriasmova, M. ; Mitev, P.H. ; Guido, L.J.
Author_Institution :
Dept. of Electr. Eng., Yale Univ., New Haven, CT, USA
Abstract :
We measured the electrical conductivity of 1-2 μm thick n-type intentionally and unintentionally doped gallium nitride samples from 1.5 to 290 K. Room-temperature Hall measurements show carrier densities in the range of 6.6×1016 to 3.7×1018 cm -3, and mobility values from 543 to 261 cm2/V-sec over this carrier density range. Hopping is among impurity sites, and the hopping distance increases with decreasing doping concentration for the silicon-doped samples
Keywords :
III-V semiconductors; carrier density; carrier mobility; electrical conductivity; gallium compounds; hopping conduction; wide band gap semiconductors; 1 to 2 mum; 1.5 to 290 K; Hall measurements; carrier densities; electrical conductivity; hopping distance; impurity sites; low temperature transport; Charge carrier density; Conductivity measurement; Density measurement; Doping; Electric variables measurement; Gallium nitride; III-V semiconductor materials; Impurities; Temperature; Thickness measurement;
Conference_Titel :
Compound Semiconductors, 2000 IEEE International Symposium on
Conference_Location :
Monterey, CA
Print_ISBN :
0-7803-6258-6
DOI :
10.1109/ISCS.2000.947202
