Title :
Leakage behavior and reliability assessment of tantalum oxide dielectric MIM capacitors
Author :
Remmel, Thomas ; Ramprasad, Rampi ; Walls, James
Author_Institution :
Semicond. Products Sector, Motorola Inc., Tempe, AZ, USA
fDate :
30 March-4 April 2003
Abstract :
Reliability assessment was used extensively during the development of allow leakage tantalum oxide MIM (metal-insulator-metal) capacitor targeted for a Cu-based wireless integrated circuit platform. Leakage of the MIM capacitor as a function of process conditions and lifetime behavior under both DC and AC stressing is presented.
Keywords :
MIM devices; copper; dielectric thin films; integrated circuit metallisation; leakage currents; life testing; semiconductor device reliability; semiconductor device testing; tantalum compounds; thin film capacitors; AC stressing; Cu-TaN-Ta2O5-TaN-Si; Cu-based wireless integrated circuit platform; DC stressing; SILC; Ta2O5 dielectric MIM capacitors; constant voltage stressing; leakage behavior; lifetime behavior; process conditions; reliability assessment; Dielectric substrates; Electrodes; High K dielectric materials; Integrated circuit reliability; MIM capacitors; Metal-insulator structures; Parasitic capacitance; Radio frequency; Semiconductor device modeling; Silicon;
Conference_Titel :
Reliability Physics Symposium Proceedings, 2003. 41st Annual. 2003 IEEE International
Print_ISBN :
0-7803-7649-8
DOI :
10.1109/RELPHY.2003.1197757
