Title :
A physical model of time-dependent dielectric breakdown in copper metallization
Author :
Wu, Wen ; Duan, Xiaodong ; Yuan, J.S.
Author_Institution :
Chip Design & Reliability Lab., Central Florida Univ., Orlando, FL, USA
fDate :
30 March-4 April 2003
Abstract :
A physical model of copper interconnect dielectric breakdown is studied. The general continuity equation about Cu+ diffusion and drift is evaluated. An analytical expression to predict the lifetime of TDDB is developed. The model predictions agree well with the experimental data at different electric fields and temperatures. The lifetime is proportional to the exponential of electric field under an acceleration stress and consistent with the "E\´ model.
Keywords :
copper; electric breakdown; integrated circuit interconnections; integrated circuit metallisation; integrated circuit modelling; integrated circuit reliability; Cu; Cu+ diffusion; Cu+ drift; E model; TDDB lifetime; acceleration stress; analytical expression; copper interconnect dielectric breakdown; copper metallization; electric field exponential; general continuity equation; physical model; time-dependent dielectric breakdown; Copper; Degradation; Dielectric breakdown; Dielectric materials; Equations; Integrated circuit interconnections; Ionization; Leakage current; Metallization; Silicon;
Conference_Titel :
Reliability Physics Symposium Proceedings, 2003. 41st Annual. 2003 IEEE International
Print_ISBN :
0-7803-7649-8
DOI :
10.1109/RELPHY.2003.1197758
