DocumentCode :
3437866
Title :
Visible emission from AlN doped with Eu, Tb, and Er ions
Author :
Jadwisienczak, W.M. ; Lozykowski, H.J. ; Berishev, I. ; Bensaoula, A. ; Brown, I.
Author_Institution :
Sch. of Electr. Eng. & Comput. Sci., Ohio State Univ., Columbus, OH, USA
fYear :
2000
fDate :
2000
Firstpage :
489
Lastpage :
494
Abstract :
We report the observation of visible cathodoluminescence (CL) from AlN thin films grown on sapphire (0001) substrate by molecular beam and doped by implantation with Eu3+, Tb3+, and Er3+ ions. The strong rare earth CL was observed from samples annealed at 1100°C for 0.5 h in N2 ambient. The sharp characteristic emission lines corresponding to Eu3+, Tb3+, and Er3+ intra -4fn shell transitions are resolved in the spectral range from 300 to 1050 nm, (for Er3+ also infrared emission at 1.54 μm was observed). The CL was recorded over the temperature range of 9-330 K. The CL kinetics for several transitions of Eu3+(5D0), Tb3+(5D3, 4) and, and Er3+( 2H9/2, 4F7/2) was analyzed
Keywords :
III-V semiconductors; aluminium compounds; cathodoluminescence; erbium; europium; terbium; wide band gap semiconductors; 1.54 mum; 1100 C; 300 to 1050 nm; 5 h; 9 to 330 K; AlN:Er; AlN:Er films; AlN:Eu; AlN:Eu films; AlN:Tb; AlN:Tb films; visible cathodoluminescence; Annealing; Doped fiber amplifiers; Erbium; Laboratories; Molecular beam epitaxial growth; Nitrogen; Optical films; Optical waveguides; Plasma temperature; Substrates;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Compound Semiconductors, 2000 IEEE International Symposium on
Conference_Location :
Monterey, CA
Print_ISBN :
0-7803-6258-6
Type :
conf
DOI :
10.1109/ISCS.2000.947204
Filename :
947204
Link To Document :
بازگشت