• DocumentCode
    3437866
  • Title

    Visible emission from AlN doped with Eu, Tb, and Er ions

  • Author

    Jadwisienczak, W.M. ; Lozykowski, H.J. ; Berishev, I. ; Bensaoula, A. ; Brown, I.

  • Author_Institution
    Sch. of Electr. Eng. & Comput. Sci., Ohio State Univ., Columbus, OH, USA
  • fYear
    2000
  • fDate
    2000
  • Firstpage
    489
  • Lastpage
    494
  • Abstract
    We report the observation of visible cathodoluminescence (CL) from AlN thin films grown on sapphire (0001) substrate by molecular beam and doped by implantation with Eu3+, Tb3+, and Er3+ ions. The strong rare earth CL was observed from samples annealed at 1100°C for 0.5 h in N2 ambient. The sharp characteristic emission lines corresponding to Eu3+, Tb3+, and Er3+ intra -4fn shell transitions are resolved in the spectral range from 300 to 1050 nm, (for Er3+ also infrared emission at 1.54 μm was observed). The CL was recorded over the temperature range of 9-330 K. The CL kinetics for several transitions of Eu3+(5D0), Tb3+(5D3, 4) and, and Er3+( 2H9/2, 4F7/2) was analyzed
  • Keywords
    III-V semiconductors; aluminium compounds; cathodoluminescence; erbium; europium; terbium; wide band gap semiconductors; 1.54 mum; 1100 C; 300 to 1050 nm; 5 h; 9 to 330 K; AlN:Er; AlN:Er films; AlN:Eu; AlN:Eu films; AlN:Tb; AlN:Tb films; visible cathodoluminescence; Annealing; Doped fiber amplifiers; Erbium; Laboratories; Molecular beam epitaxial growth; Nitrogen; Optical films; Optical waveguides; Plasma temperature; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Compound Semiconductors, 2000 IEEE International Symposium on
  • Conference_Location
    Monterey, CA
  • Print_ISBN
    0-7803-6258-6
  • Type

    conf

  • DOI
    10.1109/ISCS.2000.947204
  • Filename
    947204