DocumentCode
3437866
Title
Visible emission from AlN doped with Eu, Tb, and Er ions
Author
Jadwisienczak, W.M. ; Lozykowski, H.J. ; Berishev, I. ; Bensaoula, A. ; Brown, I.
Author_Institution
Sch. of Electr. Eng. & Comput. Sci., Ohio State Univ., Columbus, OH, USA
fYear
2000
fDate
2000
Firstpage
489
Lastpage
494
Abstract
We report the observation of visible cathodoluminescence (CL) from AlN thin films grown on sapphire (0001) substrate by molecular beam and doped by implantation with Eu3+, Tb3+, and Er3+ ions. The strong rare earth CL was observed from samples annealed at 1100°C for 0.5 h in N2 ambient. The sharp characteristic emission lines corresponding to Eu3+, Tb3+, and Er3+ intra -4fn shell transitions are resolved in the spectral range from 300 to 1050 nm, (for Er3+ also infrared emission at 1.54 μm was observed). The CL was recorded over the temperature range of 9-330 K. The CL kinetics for several transitions of Eu3+(5D0), Tb3+(5D3, 4) and, and Er3+( 2H9/2, 4F7/2) was analyzed
Keywords
III-V semiconductors; aluminium compounds; cathodoluminescence; erbium; europium; terbium; wide band gap semiconductors; 1.54 mum; 1100 C; 300 to 1050 nm; 5 h; 9 to 330 K; AlN:Er; AlN:Er films; AlN:Eu; AlN:Eu films; AlN:Tb; AlN:Tb films; visible cathodoluminescence; Annealing; Doped fiber amplifiers; Erbium; Laboratories; Molecular beam epitaxial growth; Nitrogen; Optical films; Optical waveguides; Plasma temperature; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Compound Semiconductors, 2000 IEEE International Symposium on
Conference_Location
Monterey, CA
Print_ISBN
0-7803-6258-6
Type
conf
DOI
10.1109/ISCS.2000.947204
Filename
947204
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