Title :
Single crystal rare earth oxides epitaxially grown on GaN
Author :
Hong, M. ; Kortan, A.R. ; Kwo, J. ; Mannaerts, J.P. ; Lee, C.M. ; Chyi, J.L.
Author_Institution :
Bell Labs., Lucent Technol., Murray Hill, NJ, USA
Abstract :
New single crystals of Gd2O3 and Y2 O3 were found to grow epitaxially on GaN in ultra-high vacuum. In-situ reflection high-energy electron diffraction reveals a six-fold symmetry in the in-plane epitaxy of the rare earth oxides. Single-crystal X-ray diffraction measurements find that these single-crystal oxide films are indeed the high temperature hexagonal phases of the sesquioxides, stabilized by the GaN substrate epitaxy. Despite a large mismatch in lattice constant the fully relaxed oxide films are of excellent structural quality
Keywords :
X-ray diffraction; gadolinium compounds; lattice constants; reflection high energy electron diffraction; vacuum deposited coatings; vapour phase epitaxial growth; yttrium compounds; GaN; Gd2O3; X-ray diffraction; Y2O3; in-plane epitaxy; lattice constant; reflection high-energy electron diffraction; single crystal rare earth oxides; six-fold symmetry; Crystals; Electrons; Epitaxial growth; Gallium nitride; Optical films; Phase measurement; Reflection; Substrates; Temperature; X-ray diffraction;
Conference_Titel :
Compound Semiconductors, 2000 IEEE International Symposium on
Conference_Location :
Monterey, CA
Print_ISBN :
0-7803-6258-6
DOI :
10.1109/ISCS.2000.947205
