DocumentCode
3437898
Title
Noise spectroscopy of traps in GaN devices
Author
Balandin, A. ; Wang, K.L.
Author_Institution
Dept. of Electr. Eng., California Univ., Riverside, CA, USA
fYear
2000
fDate
2000
Firstpage
501
Lastpage
506
Abstract
We present the analysis of the low-frequency noise spectra of the GaN/AlGaN heterostructure field-effect transistors with generation-recombination bulges. A method of extracting information about dominant trap levels in the GaN/AlGaN heterostructures from the low-frequency noise measurements is described. Further progress in the noise spectroscopy may help improve the quality of GaN/AlGaN heterostructures
Keywords
III-V semiconductors; aluminium compounds; electron traps; field effect transistors; gallium compounds; semiconductor device noise; semiconductor heterojunctions; wide band gap semiconductors; GaN devices; GaN-AlGaN; GaN/AlGaN heterostructure field-effect transistors; generation-recombination bulges; low-frequency noise spectra; traps; 1f noise; Acoustical engineering; Aluminum; Gallium nitride; HEMTs; Low-frequency noise; MODFETs; Noise level; Semiconductor device noise; Spectroscopy;
fLanguage
English
Publisher
ieee
Conference_Titel
Compound Semiconductors, 2000 IEEE International Symposium on
Conference_Location
Monterey, CA
Print_ISBN
0-7803-6258-6
Type
conf
DOI
10.1109/ISCS.2000.947206
Filename
947206
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