Title :
Noise spectroscopy of traps in GaN devices
Author :
Balandin, A. ; Wang, K.L.
Author_Institution :
Dept. of Electr. Eng., California Univ., Riverside, CA, USA
Abstract :
We present the analysis of the low-frequency noise spectra of the GaN/AlGaN heterostructure field-effect transistors with generation-recombination bulges. A method of extracting information about dominant trap levels in the GaN/AlGaN heterostructures from the low-frequency noise measurements is described. Further progress in the noise spectroscopy may help improve the quality of GaN/AlGaN heterostructures
Keywords :
III-V semiconductors; aluminium compounds; electron traps; field effect transistors; gallium compounds; semiconductor device noise; semiconductor heterojunctions; wide band gap semiconductors; GaN devices; GaN-AlGaN; GaN/AlGaN heterostructure field-effect transistors; generation-recombination bulges; low-frequency noise spectra; traps; 1f noise; Acoustical engineering; Aluminum; Gallium nitride; HEMTs; Low-frequency noise; MODFETs; Noise level; Semiconductor device noise; Spectroscopy;
Conference_Titel :
Compound Semiconductors, 2000 IEEE International Symposium on
Conference_Location :
Monterey, CA
Print_ISBN :
0-7803-6258-6
DOI :
10.1109/ISCS.2000.947206
