DocumentCode :
3437925
Title :
Impurities in IBAD processes
Author :
Kiuchi, M. ; Ensinger, W. ; Alberts, L. ; Enders, B. ; Wolf, G.K.
Author_Institution :
Osaka Nat.. Res. Inst., Japan
Volume :
2
fYear :
1999
fDate :
36495
Firstpage :
1029
Abstract :
Impurities in IBAD processes were discussed using radioactivation analysis with thermal neutrons. IBAD processes are useful for hard coatings. In this process, an ion source without a mass separator is normally used. So, contamination by filaments and electrodes is possible but had not been considered. We then studied impurities in Si films deposited with simultaneous Ar or N2 ion beam irradiation. The samples were activated by thermal neutron irradiation in a reactor to detect γ-ray emission. It was revealed that the electrode contaminated the film but the filament did not. It was also revealed that the atmosphere in the process was contained in the film. Impurities with vapor pressure were reduced with an ion irradiation
Keywords :
elemental semiconductors; impurity distribution; ion beam assisted deposition; neutron activation analysis; semiconductor growth; semiconductor thin films; silicon; γ-ray emission; Ar; Ar ion beam irradiation; IBAD processes; N2; N2 ion beam irradiation; Si; Si films; contamination; electrodes; filaments; hard coatings; impurities; ion irradiation; ion source; radioactivation analysis; thermal neutron irradiation; thermal neutrons; vapor pressure; Argon; Coatings; Contamination; Electrodes; Impurities; Ion beams; Ion sources; Neutrons; Particle separators; Semiconductor films;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Ion Implantation Technology Proceedings, 1998 International Conference on
Conference_Location :
Kyoto
Print_ISBN :
0-7803-4538-X
Type :
conf
DOI :
10.1109/IIT.1998.813855
Filename :
813855
Link To Document :
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