DocumentCode
3437953
Title
Optical properties of Al1-xInxN thin films determined by spectroscopic ellipsometry
Author
Kasic, A. ; Schubert, M. ; Rheinlander, B. ; Off, J. ; Scholz, F. ; Herzinger, C.M.
Author_Institution
Fakultat fur Phys. und Geowissenschaften, Leipzig Univ., Germany
fYear
2000
fDate
2000
Firstpage
513
Lastpage
518
Abstract
Infrared spectroscopic ellipsometry is used to study the influence of strain and composition on the transverse-optical phonon mode of E1 symmetry in hexagonal Al1-xInxN films for indium contents of 0.11⩽x⩽0.22. The 0.1 to 0.2 μm thick films were grown on thick slightly compressively strained α-GaN buffer layers, or directly on [0001] sapphire by metal organic vapor phase epitaxy. The Al1-xInxN E1 (TO) phonon shows a one-mode behavior in contrast to recent theoretical predictions. Films grown on GaN reveal the influence of strain on the phonon mode frequencies due to pseudomorphic film growth. Al1-xInxN deposited directly on [0001] sapphire possesses phonon modes which indicate fully relaxed film growth
Keywords
III-V semiconductors; MOCVD coatings; aluminium compounds; ellipsometry; indium compounds; infrared spectra; phonon spectra; semiconductor growth; semiconductor thin films; wide band gap semiconductors; 0.1 to 0.2 mum; Al1-xInxN thin films; AlInN; E1 symmetry; IR spectroscopic ellipsometry; composition; optical properties; phonon mode frequencies; phonon modes; pseudomorphic film growth; strain; transverse-optical phonon mode; Buffer layers; Capacitive sensors; Ellipsometry; Indium; Infrared spectra; Optical buffering; Optical films; Phonons; Spectroscopy; Thick films;
fLanguage
English
Publisher
ieee
Conference_Titel
Compound Semiconductors, 2000 IEEE International Symposium on
Conference_Location
Monterey, CA
Print_ISBN
0-7803-6258-6
Type
conf
DOI
10.1109/ISCS.2000.947208
Filename
947208
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