High-performance back-illuminated solar-blind AlGaN metal-semiconductor-metal photodetectors

Author

Lambert, D.J.H. ; yang, Bo ; Li, Tong ; Collins, C.J. ; Wong, M.M. ; Chowdhury, U. ; Shelton, B.S. ; Beck, A.L. ; Campbell, Joe C. ; Dupuis, Russell

Author_Institution

Microelectron. Res. Center, Texas Univ., Austin, TX

fYear

2000

fDate

2000

Firstpage

525

Lastpage

530

Abstract

We report the growth, fabrication, and characterization of Al_xGa_1-xN(0.44⩽x⩽0.58) heteroepitaxial back-illuminated solar-blind AlGaN metal-semiconductor-metal (MSM) photodetectors. High-quality unintentionally doped AlGaN material, with Al composition above 0.44, is used to fabricate devices with dark currents lower than 20 fA for bias voltages ~-100 V. The photodetectors operate in the solar-blind regime with a cutoff wavelength of ~280 nm. For these devices, the external quantum efficiency peaks at λ~262 nm and reaches a maximum value as high as 48%

Keywords

III-V semiconductors; aluminium compounds; dark conductivity; gallium compounds; metal-semiconductor-metal structures; photodetectors; wide band gap semiconductors; 100 V; 262 nm; 280 nm; 48 percent; AlGaN; dark currents; external quantum efficiency peaks; high-performance back-illuminated solar-blind AlGaN MSM photodetectors; Aluminum gallium nitride; Composite materials; Doping; Fabrication; Light emitting diodes; PIN photodiodes; Photoconducting devices; Photoconducting materials; Photoconductivity; Photodetectors;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductors, 2000 IEEE International Symposium on

Conference_Location

Monterey, CA

Print_ISBN

0-7803-6258-6

Type

conf

DOI

10.1109/ISCS.2000.947210

Filename

947210