DocumentCode
3438000
Title
Current collapse induced in AlGaN/GaN HEMTs by short-term DC bias stress
Author
Mittereder, J.A. ; Binari, S.C. ; Klein, P.B. ; Roussos, J.A. ; Katzer, D.S. ; Storm, D.F. ; Koleske, D.D. ; Wickenden, A.E. ; Henry, R.L.
Author_Institution
Naval Res. Lab., Washington, DC, USA
fYear
2003
fDate
30 March-4 April 2003
Firstpage
320
Lastpage
323
Abstract
GaN HEMTs grown by MOCVD and by MBE were subjected to short term bias-stress. Current collapse was found to be induced in most of the devices after stress, apparently caused by the generation or activation of trapping centers.
Keywords
III-V semiconductors; MOCVD; aluminium compounds; gallium compounds; microwave field effect transistors; microwave power transistors; molecular beam epitaxial growth; power HEMT; semiconductor device reliability; wide band gap semiconductors; Al0.25Ga0.75N-GaN; Al2O3; AlGaN/GaN HEMTs; MBE; MOCVD; SiC; SiC substrates; current collapse; microwave high-power solid state applications; sapphire substrates; short-term DC bias stress; trapping centers; Aluminum gallium nitride; Gallium nitride; HEMTs; Laboratories; MOCVD; MODFETs; Microwave devices; Stress; Testing; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium Proceedings, 2003. 41st Annual. 2003 IEEE International
Print_ISBN
0-7803-7649-8
Type
conf
DOI
10.1109/RELPHY.2003.1197766
Filename
1197766
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