Characterization of light emission from SiGe heterojunction bipolar transistor for photon emission microscopy applications

Author

Polonsky, Stas ; Talalaevskii, Andrei ; McManus, Moyra

Author_Institution

IBM T. J. Watson Res. Center, Yorktown Heights, NY, USA

fYear

2003

fDate

30 March-4 April 2003

Firstpage

344

Lastpage

346

Abstract

Light emission from SiGe heterojunction bipolar transistors (HBTs) was characterized for photon emission microscopy applications. Radiative recombination dominates in the non-saturation regime. It increases in the saturation regime due to an increased concentration of minority charge carriers in the base. Hot electron radiation dominates in the avalanche and is suppressed at large collector currents due to base widening.

Keywords

Ge-Si alloys; avalanche breakdown; electroluminescence; failure analysis; heterojunction bipolar transistors; hot carriers; minority carriers; semiconductor device breakdown; semiconductor device reliability; semiconductor materials; HBT; PICA; SiGe; SiGe heterojunction bipolar transistor; avalanche; base widening; failure analysis; hot electron radiation; light emission; minority charge carrier concentration; nonsaturation regime; photon emission microscopy; picosecond imaging circuit analysis; radiative recombination; saturation regime; Bipolar transistors; CMOS logic circuits; FETs; Germanium silicon alloys; Heterojunction bipolar transistors; Optical microscopy; Pulse measurements; Radiative recombination; Semiconductor device measurement; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium Proceedings, 2003. 41st Annual. 2003 IEEE International

Print_ISBN

0-7803-7649-8

Type

conf

DOI

10.1109/RELPHY.2003.1197771

Filename

1197771