Title :
Investigation of ESD devices in 0.18 μm SiGe BiCMOS process
Author :
Chen, Shiao-Shien ; Chen, Tung-Yang ; Tang, Tien-Hao ; Hsu, Tsun-Lai ; Tseng, Hua-Chou ; Chen, Jen-Kon ; Chou, Chiu-Hsiang
Author_Institution :
Device Eng. Dept., United Microelectron. Corp., Hsin-Chu, Taiwan
fDate :
30 March-4 April 2003
Abstract :
This paper investigates the characteristics of ESD devices in a 0.18 μm silicon-germanium (SiGe) BiCMOS process including SiGe heterojunction bipolar transistors (HBTs), gate-grounded N/PMOS transistors, p-n junction diodes in SiGe HBTs, p+/n-well diodes, and BiCMOS deep-trench (DT) diodes. According to our results, an open base configuration in the SiGe HBT has a lower trigger voltage and higher ESD efficiency than the gate-grounded N/PMOS. In addition, we propose a novel BiCMOS low-leakage DT diode string with controllable blocking voltage for RF-ESD protection designs.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; electrostatic discharge; heterojunction bipolar transistors; integrated circuit reliability; leakage currents; protection; radiofrequency integrated circuits; semiconductor device reliability; semiconductor materials; 0.18 μm SiGe BiCMOS process; 0.18 micron; BiCMOS deep-trench diodes; ESD devices; ESD efficiency; HBTs; RF-ESD protection designs; SiGe; SiGe heterojunction bipolar transistor; controllable blocking voltage; gate-grounded N/PMOS transistors; open base configuration; p-n junction diodes; p+/n-well diodes; radio-frequency IC design; trigger voltage; BiCMOS integrated circuits; Diodes; Electrostatic discharge; Germanium silicon alloys; Heterojunction bipolar transistors; MOSFETs; P-n junctions; Protection; Silicon germanium; Voltage control;
Conference_Titel :
Reliability Physics Symposium Proceedings, 2003. 41st Annual. 2003 IEEE International
Print_ISBN :
0-7803-7649-8
DOI :
10.1109/RELPHY.2003.1197773
