Thermal stress and reliability analysis of microstrip isolator under temperature shock

Author

Limei Rong ; Qingwei Yu ; Longhuan Du ; Jiangfeng Du ; Xiaoming Zheng ; Xiaowen Zhang ; Zuwen Wang

Author_Institution

Sch. of Microelectron. & Solid-State Electron., Univ. of Electron. Sci. & Technol. of China, Chengdu, China

fYear

2013

fDate

15-18 July 2013

Firstpage

829

Lastpage

831

Abstract

The stress of microstrip isolator under 50 temperature shocks was simulated using ANSYS. Simulation results showed that the maximum stress of microstrip isolator was in ferrite substrate after 50 temperature shocks, and the maximum stress of ferrite substrate increased from 38.3MPa to 60MPa with a growth of 56.7% and especially increased by 43.3% after first 5 temperature shocks, and the bottom surface of ferrite substrate was its maximal stress region. The importance of first 5 shocks in 50 temperature shocks was analyzed, and the influence of each part in microstrip isolator on device reliability was discussed according to stress distribution under 50 temperature shocks, material properties, and process features, and some measures were provided for improving microstrip isolator reliability under temperature shock.

Keywords

ferrite isolators; integrated circuit reliability; microwave devices; thermal stresses; ANSYS simulation; device reliability; ferrite substrate; material properties; maximal stress region; microstrip isolator; process features; reliability analysis; temperature shock; thermal stress; Electric shock; Ferrites; Isolators; Microstrip; Stress; Substrates; Temperature distribution; ANSYS; ferrite substrate; microstrip isolator; reliability; temperature shock;

fLanguage

English

Publisher

ieee

Conference_Titel

Quality, Reliability, Risk, Maintenance, and Safety Engineering (QR2MSE), 2013 International Conference on

Conference_Location

Chengdu

Print_ISBN

978-1-4799-1014-4

Type

conf

DOI

10.1109/QR2MSE.2013.6625698

Filename

6625698