DocumentCode :
3438290
Title :
Measured minority-carrier lifetime and CIGS device performance
Author :
Repins, Ingrid L. ; Metzger, Wyatt K. ; Perkins, Craig L. ; Li, Jian V. ; Contreras, Miguel A.
fYear :
2009
fDate :
7-12 June 2009
Abstract :
The relationship between lifetime measured by time-resolved photoluminescence on bare CIGS films and subsequent device performance is examined. A correlation between device voltage and lifetime is demonstrated. The effects of measured band gap and carrier density are discussed. Results are compared with fundamental calculations.
Keywords :
carrier density; carrier lifetime; copper compounds; energy gap; gallium compounds; indium compounds; photoluminescence; semiconductor thin films; solar cells; ternary semiconductors; time resolved spectra; CIGS films; CuInGaSe2; band gap; carrier density; minority carrier lifetime; time-resolved photoluminescence; Conductive films; Degradation; Energy measurement; Manufacturing; Optical pulses; Photoluminescence; Pollution measurement; Pulse amplifiers; Substrates; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2009 34th IEEE
Conference_Location :
Philadelphia, PA
ISSN :
0160-8371
Print_ISBN :
978-1-4244-2949-3
Electronic_ISBN :
0160-8371
Type :
conf
DOI :
10.1109/PVSC.2009.5411126
Filename :
5411126
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3438290
بازگشت