Title :
Gallium phosphide solar cells for multi-juntion systems
Author :
Lu, Xuesong ; Huang, Susan R. ; Opila, Robert L. ; Barnett, Allen
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Delaware, Newark, DE, USA
Abstract :
Gallium Phosphide (GaP) is a good candidate for a high band gap solar cell in a multi-junction solar cell system due to its proper band gap (2.26ev), well developed technology, and high carrier mobility. High energy gap solar cell plays a very important role in multi-junction systems. In this paper, theoretical simulation work has been done for GaP solar cells by PC-1D software. High quality GaP epitaxial layers have been grown on GaP (100) and (111) substrates via liquid phase epitaxial (LPE) method. Scanning electron microscopy (SEM) and X-ray diffraction (XRD) have been used to characterize the surface morphology and quality of the growth layer, respectively. I-V measurement has been used to test the performance of GaP solar cells. The open circuit voltage, which is the most important feature of GaP solar cells, is 1.33V under simulated one sun illumination in our lab.
Keywords :
III-V semiconductors; X-ray diffraction; carrier mobility; energy gap; gallium compounds; liquid phase epitaxial growth; scanning electron microscopy; semiconductor epitaxial layers; semiconductor growth; semiconductor heterojunctions; solar cells; surface morphology; thin film devices; GaP; X-ray diffraction; carrier mobility; high band gap solar cell; high energy gap solar cell; high quality epitaxial layers; liquid phase epitaxial method; multi-junction solar cell system; open circuit voltage; scanning electron microscopy; surface morphology; Circuit testing; Epitaxial layers; Gallium compounds; Photonic band gap; Photovoltaic cells; Scanning electron microscopy; Substrates; Surface morphology; X-ray diffraction; X-ray scattering; Gallium Phosphide; Liquid Phase Epitaxy; SEM; XRD;
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2009 34th IEEE
Conference_Location :
Philadelphia, PA
Print_ISBN :
978-1-4244-2949-3
Electronic_ISBN :
0160-8371
DOI :
10.1109/PVSC.2009.5411128
