DocumentCode :
3438387
Title :
Development of solar cells on RST-ribbons
Author :
Robbelein, J. ; Van Kerschaver, E. ; Belouet, C. ; Jolivet, E. ; Posthuma, N.E. ; Chan, B.T. ; Monville, M. ; Bigot, C. ; Poortmans, J.
Author_Institution :
IMEC, Leuven, Belgium
fYear :
2009
fDate :
7-12 June 2009
Abstract :
When considering the cost of a photovoltaic module, still a large part consists of silicon wafer material. One solution is the usage of ribbon material, which provides moderate quality material at a low cost due to low kerf losses. Here we present the use of Ribbon on a Sacrificial Template (RST) wafers in a classic solar cell process. The quality of this material is determined by Quasi Steady State Photo Conductance (QSSPC) lifetime measurements indicating a minority carrier diffusion length up to 100¿m. The classic solar cell processing combining various metallization techniques like screenprinting and evaporation leads to energy conversion efficiencies up to 11.5% on 11.44cm2 large ribbons. A big boost in efficiency is related to the use of plasma texturing, developed at IMEC, which proofs to be a good technique for texturing poly-crystalline material. The results presented in this paper show that RST material can become a cost competitive ribbon technology for solar cell applications.
Keywords :
carrier lifetime; elemental semiconductors; metallisation; photoconductivity; plasma applications; silicon; solar cells; thick films; Si; energy conversion efficiencies; evaporation; metallization; minority carrier diffusion length; photovoltaic module; plasma texturing; polycrystalline material; quasisteady state photo conductance lifetime measurements; ribbon material; sacrificial template wafers; screenprinting; silicon wafer material; size 100 mum; solar cell; Conducting materials; Costs; Energy conversion; Lifetime estimation; Metallization; Photovoltaic cells; Photovoltaic systems; Silicon; Solar power generation; Steady-state;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2009 34th IEEE
Conference_Location :
Philadelphia, PA
ISSN :
0160-8371
Print_ISBN :
978-1-4244-2949-3
Electronic_ISBN :
0160-8371
Type :
conf
DOI :
10.1109/PVSC.2009.5411131
Filename :
5411131
Link To Document :
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