Title :
Data retention, endurance and acceleration factors of NROM devices
Author_Institution :
Saifun Semicond. Ltd., Netanya, Israel
fDate :
30 March-4 April 2003
Abstract :
Reliability studies of Saifun NROM devices are presented. Data retention characteristics vs time, temperature and cycling level are explained based on a charge trapping and re-emission model. The thermal acceleration factor between ambient storage and 150°C is shown to be 7×105. Storage life at room temperature after 100K memory cycles is predicted to be in excess of 100 years. A qualification method of NROM devices is discussed in view of these results.
Keywords :
CMOS memory circuits; EPROM; integrated circuit reliability; integrated circuit testing; life testing; 100 year; 150 C; CMOS process; EEPROM; Saifun NROM devices; acceleration factors; charge trapping and re-emission model; cycling level; data retention; endurance; qualification method; reliability; storage life; thermal acceleration factor; Acceleration; Charge carrier processes; Electron traps; Nonvolatile memory; Qualifications; SONOS devices; Semiconductor device manufacture; Stress; Temperature; Tunneling;
Conference_Titel :
Reliability Physics Symposium Proceedings, 2003. 41st Annual. 2003 IEEE International
Print_ISBN :
0-7803-7649-8
DOI :
10.1109/RELPHY.2003.1197799
