Title :
The effect of crystallinity of p window layers on the structural and electrical properties of intrinsic μc-Si:H and superstrate solar cells
Author :
Jang, Ji Hoon ; Lee, Jeong Chul ; Cho, Jun-Sik ; Lee, Seung Yoon ; Lee, Hyun Min ; Park, Hai Woong ; Song, J. ; Yoon, K.H.
Author_Institution :
Korea Inst. of Energy Res., Photovoltaic Res. Center, South Korea
Abstract :
Effects of crystallinity of the p window layers in the pin solar cells having hydrogenated microcrystalline silicon (μc-Si:H) films as an absorber layer on solar cell performance are investigated through the evaluation of the photovoltaic characteristics of solar cells prepared by varying the gas ratio of SiH4/H2 during the p layer deposition. By Raman scattering spectroscopy analysis, it is observed that the volume fraction of crystalline/amorphous phases (Xc) of p layers decreases from 31.0% to 5.1% with increasing the SiH4 concentration from 0.2 to 1.0 sccm at fixed H2 of 180 sccm. Depending on the Xc of the p layers, the solar cell performance is affected significantly, where the solar cells with the p window layers of low Xc represent good photovoltaic characteristics, namely high open circuit voltage (Voc) and short circuit current density (Jsc). Some experimental results and discussion about relationship between crystalline structure of p layers and performance of μc-Si:H solar cells will be presented briefly in this paper.
Keywords :
Raman spectra; current density; elemental semiconductors; hydrogen; photovoltaic effects; semiconductor thin films; short-circuit currents; silicon; solar cells; thin film devices; Raman scattering spectroscopy analysis; Si:H; absorber layer; amorphous phase; crystalline phase; crystalline structure; crystallinity; gas ratio; hydrogenated microcrystalline films; open circuit voltage; p window layers; photovoltaic characteristics; pin solar cells; short circuit current density; superstrate solar cells; volume fraction; Amorphous materials; Circuits; Crystallization; Photovoltaic cells; Photovoltaic systems; Raman scattering; Semiconductor films; Silicon; Solar power generation; Spectroscopy;
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2009 34th IEEE
Conference_Location :
Philadelphia, PA
Print_ISBN :
978-1-4244-2949-3
Electronic_ISBN :
0160-8371
DOI :
10.1109/PVSC.2009.5411157