DocumentCode
3438913
Title
Some Contributions to the Understanding of the Puzzle of Physical Processes of Degradation in Irradiated Silicon
Author
Lazanu, S. ; Lazanu, I. ; Ciurea, M.L.
Author_Institution
Nat. Inst. of Mater. Phys., Bucharest
Volume
2
fYear
2007
fDate
Oct. 15 2007-Sept. 17 2007
Firstpage
319
Lastpage
322
Abstract
In the present paper, we intend to bring some clarifications related to the role played by primary defects in long term degradation, to the dependence of degradation on the orientation of the wafer, as well as on the spatial distribution of the degradation produced by low energy particle irradiation.
Keywords
crystal orientation; elemental semiconductors; point defects; proton effects; silicon; silicon radiation detectors; Si; defect kinetics; irradiated silicon; low energy particle irradiation; point defects; proton effect; radiation damage; silicon detectors; wafer orientation; Atomic measurements; Crystalline materials; Degradation; Kinetic theory; Lattices; Leakage current; Physics; Radiation detectors; Semiconductor radiation detectors; Silicon radiation detectors; defect kinetics; radiation damage; silicon detectors;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Conference, 2007. CAS 2007. International
Conference_Location
Sinaia
ISSN
1545-827X
Print_ISBN
978-1-4244-0847-4
Type
conf
DOI
10.1109/SMICND.2007.4519724
Filename
4519724
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