Title :
A study on GaAs FET´s failure mechanism and experimental technology of rapid evaluation of reliability
Author :
Zhiguo, Li ; Zengchao, Song ; Yaohai, Cheng ; Jiuxia, Xuan ; Zhou Zhongrong ; Wanrong, Zhang ; Dapeng, Sun ; Gao Guangbo
Author_Institution :
Coll. of Electron. Inf. & Control Eng., Beijng Univ. of Technol., Beijing, China
fDate :
30 March-4 April 2003
Abstract :
A new evaluation method is proposed in this paper based on the temperature characteristic of IDSS which is a sensitive parameter to the failure of GaAs FETs and the degradation characteristics of devices under electrothermal stress. With this new method we can extract information on the relationship between degradation of IDSS and temperature rapidly and on line. Reliability parameters of GaAs FETs can be determined rapidly, such as the activation energy to failure Q.
Keywords :
III-V semiconductors; Schottky gate field effect transistors; failure analysis; gallium arsenide; high-temperature electronics; ohmic contacts; power field effect transistors; semiconductor device metallisation; semiconductor device reliability; 200 to 292 C; GaAs; GaAs FET CX672B; GaAs FET failure mechanism; Pt; Pt barrier layer; TiAl; TiAl gate; TiPtAu; TiPtAu gate; activation energy to failure; degradation characteristics; electrothermal stress; ohmic contact; power GaAs FET CS0531; rapid reliability evaluation; reliability parameters; Degradation; Electric variables measurement; Equations; FETs; Failure analysis; Gallium arsenide; Heat sinks; Resistance heating; Stress; Temperature sensors;
Conference_Titel :
Reliability Physics Symposium Proceedings, 2003. 41st Annual. 2003 IEEE International
Print_ISBN :
0-7803-7649-8
DOI :
10.1109/RELPHY.2003.1197813
