A study on GaAs FET´s failure mechanism and experimental technology of rapid evaluation of reliability

Author

Zhiguo, Li ; Zengchao, Song ; Yaohai, Cheng ; Jiuxia, Xuan ; Zhou Zhongrong ; Wanrong, Zhang ; Dapeng, Sun ; Gao Guangbo

Author_Institution

Coll. of Electron. Inf. & Control Eng., Beijng Univ. of Technol., Beijing, China

fYear

2003

fDate

30 March-4 April 2003

Firstpage

576

Lastpage

577

Abstract

A new evaluation method is proposed in this paper based on the temperature characteristic of I_DSS which is a sensitive parameter to the failure of GaAs FETs and the degradation characteristics of devices under electrothermal stress. With this new method we can extract information on the relationship between degradation of I_DSS and temperature rapidly and on line. Reliability parameters of GaAs FETs can be determined rapidly, such as the activation energy to failure Q.

Keywords

III-V semiconductors; Schottky gate field effect transistors; failure analysis; gallium arsenide; high-temperature electronics; ohmic contacts; power field effect transistors; semiconductor device metallisation; semiconductor device reliability; 200 to 292 C; GaAs; GaAs FET CX672B; GaAs FET failure mechanism; Pt; Pt barrier layer; TiAl; TiAl gate; TiPtAu; TiPtAu gate; activation energy to failure; degradation characteristics; electrothermal stress; ohmic contact; power GaAs FET CS0531; rapid reliability evaluation; reliability parameters; Degradation; Electric variables measurement; Equations; FETs; Failure analysis; Gallium arsenide; Heat sinks; Resistance heating; Stress; Temperature sensors;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium Proceedings, 2003. 41st Annual. 2003 IEEE International

Print_ISBN

0-7803-7649-8

Type

conf

DOI

10.1109/RELPHY.2003.1197813

Filename

1197813