DocumentCode
3438946
Title
Experimental study and modeling of the temperature dependence of soft breakdown conduction in ultrathin gate oxides
Author
Avellán, A. ; Miranda, E. ; Sell, B. ; Krautschneider, W.
Author_Institution
Inst. fur Mikroelektron., Technische Univ. Hamburg-Harburg, Hamburg, Germany
fYear
2003
fDate
30 March-4 April 2003
Firstpage
580
Lastpage
581
Abstract
In this work, we focus our interest on the temperature dependence of soft breakdown conduction (SBD), mainly in the range in which real devices are commonly operated (-20°C\n\n\t\t
Keywords
MOSFET; dielectric thin films; mesoscopic systems; quantum point contacts; semiconductor device breakdown; semiconductor device models; semiconductor device reliability; -20 to 160 C; I-V characteristics; analytical modeling; barrier height; flowing current magnitude; industry-standard dual-gate process; mesoscopic conductors; oxide thicknesses; potential drop distribution; quantum point contact model; soft breakdown conduction; substrate types; temperature dependence; ultrathin gate oxides; Analytical models; Conductors; Electric breakdown; Electrodes; Electrons; Physics; Shape; Temperature dependence; Temperature distribution; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium Proceedings, 2003. 41st Annual. 2003 IEEE International
Print_ISBN
0-7803-7649-8
Type
conf
DOI
10.1109/RELPHY.2003.1197815
Filename
1197815
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