Title :
Experimental study and modeling of the temperature dependence of soft breakdown conduction in ultrathin gate oxides
Author :
Avellán, A. ; Miranda, E. ; Sell, B. ; Krautschneider, W.
Author_Institution :
Inst. fur Mikroelektron., Technische Univ. Hamburg-Harburg, Hamburg, Germany
fDate :
30 March-4 April 2003
Abstract :
In this work, we focus our interest on the temperature dependence of soft breakdown conduction (SBD), mainly in the range in which real devices are commonly operated (-20°C\n\n\t\t
Keywords :
MOSFET; dielectric thin films; mesoscopic systems; quantum point contacts; semiconductor device breakdown; semiconductor device models; semiconductor device reliability; -20 to 160 C; I-V characteristics; analytical modeling; barrier height; flowing current magnitude; industry-standard dual-gate process; mesoscopic conductors; oxide thicknesses; potential drop distribution; quantum point contact model; soft breakdown conduction; substrate types; temperature dependence; ultrathin gate oxides; Analytical models; Conductors; Electric breakdown; Electrodes; Electrons; Physics; Shape; Temperature dependence; Temperature distribution; Threshold voltage;
Conference_Titel :
Reliability Physics Symposium Proceedings, 2003. 41st Annual. 2003 IEEE International
Print_ISBN :
0-7803-7649-8
DOI :
10.1109/RELPHY.2003.1197815
