DocumentCode :
3438966
Title :
ZnO Micro/Nano Structures by MOCVD and Vapour Transport Technique: Growth and Characterization
Author :
Rusu, E. ; Burlacu, A. ; Ursaki, V. ; Stratan, G. ; Purica, M. ; Budianu, E. ; Monaico, E.
Author_Institution :
Inst. of Appl. Phys., Acad. of Sci. of Moldova, Chisinau
Volume :
2
fYear :
2007
fDate :
Oct. 15 2007-Sept. 17 2007
Firstpage :
327
Lastpage :
330
Abstract :
ZnO micro/nano structures were grown by metalo-organic chemical vapour deposition (MOCVD) and chemical vapour transport and condensation deposition process on Si and glass substrates. Using MOCVD method were grown uniform layers consisting of ZnO nanorods, or multilayer structures composed of nanorods and microrods arrays by the variation of the Ar carrier gas flow rate. A variety of hierarchical ZnO structures were grown on a textured ZnO layer using chemical vapour transport and condensation deposition process. Morphology, structural and optical properties of the obtained ZnO nanostructures are studied by means of scanning electron microscopy (SEM), X-ray diffraction (XRD) analysis and photoluminescence (PL).
Keywords :
II-VI semiconductors; MOCVD; X-ray diffraction; condensation; multilayers; nanostructured materials; nanotechnology; photoluminescence; scanning electron microscopy; semiconductor growth; wide band gap semiconductors; zinc compounds; MOCVD; SEM; Si; X-ray diffraction; XRD; ZnO; carrier gas flow rate; chemical vapour transport; condensation deposition process; glass substrates; hierarchical structures; metalo-organic chemical vapour deposition; microrods arrays; multilayer structures; nanorods; optical properties; photoluminescence; scanning electron microscopy; Argon; Chemical processes; Chemical vapor deposition; Glass; MOCVD; Nanostructures; Nonhomogeneous media; Optical microscopy; Scanning electron microscopy; Zinc oxide; MOCVD; SEM; XRD analysis; ZnO micro/nano structures; chemical vapour transport and condensation method; photoluminescence;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Conference, 2007. CAS 2007. International
Conference_Location :
Sinaia
ISSN :
1545-827X
Print_ISBN :
978-1-4244-0847-4
Type :
conf
DOI :
10.1109/SMICND.2007.4519726
Filename :
4519726
Link To Document :
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