Title :
FIB-induced deposition of conducting material with intermediate resistivity for design debugging
Author :
Gu, G.Y. ; Bassom, N.J. ; Casey, I.D., Jr. ; Scipioni, L. ; Saxonis, A. ; Huynh, C.
Author_Institution :
FEI Co., Peabody, MA, USA
fDate :
30 March-4 April 2003
Abstract :
Summary form only given. We have developed a process for the FIB deposition of material with a resistivity of 1-2×106 μΩ-cm by combining W(CO)6 and tetramethylcyclotetrasiloxane (TMCTS) as precursors. Our experiments show that the resistivity of the material is a function of TMCTS at low concentration and reaches a plateau as TMCTS pressure increases. The resistivity value plateaus at ∼2×106 μΩ-cm which is suitable for the circuit edit process. The material also shows excellent I-V linearity over voltages exceeding 10 volts. The reproducible resistivity along with the large linearity range enable the creation of structures with required resistances in the kilo-ohm to mega-ohm range by control of film thickness, width and length.
Keywords :
chemical vapour deposition; electrical resistivity; focused ion beam technology; integrated circuit design; integrated circuit metallisation; integrated circuit reliability; organic compounds; tungsten compounds; 1E6 to 2E6 muohmcm; FIB-induced deposition; I-V linearity; W(CO)6; circuit edit process; conducting material; design debugging; film thickness control; intermediate resistivity; precursors; resistivity value; tetramethylcyclotetrasiloxane; Circuits; Conducting materials; Conductivity; Debugging; Dielectric materials; Electrons; Ion beams; Linearity; Spectroscopy; Tungsten;
Conference_Titel :
Reliability Physics Symposium Proceedings, 2003. 41st Annual. 2003 IEEE International
Print_ISBN :
0-7803-7649-8
DOI :
10.1109/RELPHY.2003.1197820
