Title :
Temperature dependent current and charge trapping in thick SiO2/ZrO2 stacks
Author :
Blomme, Pieter ; Govoreanu, Bogdan ; Van Houdt, Jan ; De Meyer, K.
Author_Institution :
IMEC, Leuven, Belgium
fDate :
30 March-4 April 2003
Abstract :
The influence of charge trapping on the temperature dependence of leakage through thick SiO2/ZrO2 stacks is investigated. Charge trapping measurements as well as DC and pulsed I-V measurements are used, showing that an apparent strong temperature dependence of the leakage current can be explained by tunneling wherein temperature dependent trapped charge alters the effective barrier and therefore strongly influences the tunneling current. A weak temperature dependence of the current through these stacks is obtained with pulsed measurements.
Keywords :
MOS capacitors; charge injection; dielectric thin films; leakage currents; pulse measurement; semiconductor device reliability; silicon compounds; tunnelling; zirconium compounds; 2 to 4 nm; 8 to 20 nm; DC measurements; SiO2-ZrO2; capacitors; charge trapping; effective barrier; pulsed I-V measurements; pulsed measurements; strong temperature dependence; temperature dependent leakage current; thick SiO2/ZrO2 stacks; tunneling current; weak temperature dependence; Charge measurement; Conducting materials; Current measurement; High K dielectric materials; High-K gate dielectrics; Pulse measurements; Silicon; Temperature dependence; Thickness measurement; Tunneling;
Conference_Titel :
Reliability Physics Symposium Proceedings, 2003. 41st Annual. 2003 IEEE International
Print_ISBN :
0-7803-7649-8
DOI :
10.1109/RELPHY.2003.1197821
