Title :
Effect of Sn Dopant on the Properties of ZnO Nanorod Arrays
Author :
Lupan, O. ; Chow, L. ; Ursaki, V. ; Monaico, E. ; Tiginyanu, I. ; Shishiyanu, S. ; Shishiyanu, T. ; Park, S. ; Schulte, A.
Author_Institution :
Dept. of Microelectron. & Semicond. Devices, Moldova Tech. Univ., Chisinau
fDate :
Oct. 15 2007-Sept. 17 2007
Abstract :
Sn-doped ZnO nanorod arrays were synthesized by a novel method combining the aqueous solution process with post-growth rapid photothermal processing (RPP). The post-growth RPP of Sn-doped ZnO nanostrnctures at 700 degC in vacuum was found to result in a drastic decrease of the near-bandgap photoluminescence intensity. A comparison of the impact of RPP in Sn and AI doped samples is performed and the reasons of near-bandgap photoluminescence intensity decrease in Sn-doped samples are discussed.
Keywords :
II-VI semiconductors; crystal growth from solution; doping profiles; nanostructured materials; photoluminescence; photothermal effects; semiconductor growth; spectral line intensity; tin; wide band gap semiconductors; zinc compounds; ZnO:Sn; aqueous solution process; dopant effect; hydrothermal growth; nanorod arrays; nanostructured materials; near-bandgap photoluminescence intensity; post-growth rapid photothermal processing; temperature 700 C; Chemicals; Nanostructures; Optical sensors; Photoluminescence; Physics; Rapid thermal processing; Semiconductor materials; Substrates; Tin; Zinc oxide; RPP; Sn-doped ZnO nanorod arrays; photoluminescence;
Conference_Titel :
Semiconductor Conference, 2007. CAS 2007. International
Conference_Location :
Sinaia
Print_ISBN :
978-1-4244-0847-4
DOI :
10.1109/SMICND.2007.4519732
