An XPS Study on N Doped TiO2 Sol-Gel Thin Films

Author

Osiceanu, P. ; Anastasescu, M. ; Anastasescu, C. ; Trapalis, Chr ; Giannakopoulou, T. ; Todorova, N.

Author_Institution

Ilie Murgulescu Inst. of Phys. Chem., Bucharest

Volume

2

fYear

2007

fDate

Oct. 15 2007-Sept. 17 2007

Firstpage

353

Lastpage

356

Abstract

In this paper we report on a systematic XPS study on N doped TiO₂ sol-gel thin films deposited by sol-gel technique. For this purpose, four kinds of multilayered TiO₂ films thermally treated in O₂ and NH₃ at 500 and 600degC were deposited on quartz substrate by sol-gel & dipping method. A special attention has been focused on Nls and Ti2p photoelectron lines behaviour as a function of temperature and atmosphere of annealing process in order to investigate the features of the Ti-O-N bonds.

Keywords

X-ray photoelectron spectra; annealing; bonds (chemical); dip coating; nitrogen; sol-gel processing; thin films; titanium compounds; SiO₂; TiO₂; XPS study; annealing process; chemical bonding; dipping method; multilayered films; quartz substrate; sol-gel method; temperature 500 C; temperature 600 C; thin films; Atmosphere; Bonding; Chemical technology; Dip coating; Furnaces; Mechanical factors; Optical films; Sputtering; Temperature; Titanium; Ti-O-N chemical bonding; XPS; multilayered N-doped TiO2; sol-gel;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference, 2007. CAS 2007. International

Conference_Location

Sinaia

ISSN

1545-827X

Print_ISBN

978-1-4244-0847-4

Type

conf

DOI

10.1109/SMICND.2007.4519733

Filename

4519733