Title :
An XPS Study on N Doped TiO2 Sol-Gel Thin Films
Author :
Osiceanu, P. ; Anastasescu, M. ; Anastasescu, C. ; Trapalis, Chr ; Giannakopoulou, T. ; Todorova, N.
Author_Institution :
Ilie Murgulescu Inst. of Phys. Chem., Bucharest
fDate :
Oct. 15 2007-Sept. 17 2007
Abstract :
In this paper we report on a systematic XPS study on N doped TiO2 sol-gel thin films deposited by sol-gel technique. For this purpose, four kinds of multilayered TiO2 films thermally treated in O2 and NH3 at 500 and 600degC were deposited on quartz substrate by sol-gel & dipping method. A special attention has been focused on Nls and Ti2p photoelectron lines behaviour as a function of temperature and atmosphere of annealing process in order to investigate the features of the Ti-O-N bonds.
Keywords :
X-ray photoelectron spectra; annealing; bonds (chemical); dip coating; nitrogen; sol-gel processing; thin films; titanium compounds; SiO2; TiO2; XPS study; annealing process; chemical bonding; dipping method; multilayered films; quartz substrate; sol-gel method; temperature 500 C; temperature 600 C; thin films; Atmosphere; Bonding; Chemical technology; Dip coating; Furnaces; Mechanical factors; Optical films; Sputtering; Temperature; Titanium; Ti-O-N chemical bonding; XPS; multilayered N-doped TiO2; sol-gel;
Conference_Titel :
Semiconductor Conference, 2007. CAS 2007. International
Conference_Location :
Sinaia
Print_ISBN :
978-1-4244-0847-4
DOI :
10.1109/SMICND.2007.4519733
