DocumentCode
3439194
Title
CIGS solar cells with very thin absorber layers
Author
Haug, Veronika ; Quintilla, Aina ; Ahlswede, Erik
Author_Institution
Zentrum fur Sonnenenergie- und Wasserstoff-Forschung (ZSW), Stuttgart, Germany
fYear
2009
fDate
7-12 June 2009
Abstract
An additional carbon layer between Cu(In,Ga)Se2 (CIGS) layer and molybdenum (Mo) back contact can increase the efficiency of solar cells with very thin absorber layers. In this study the so produced solar cells co-evaporated on top of a carbon layer are compared with cells co-evaporated directly on molybdenum. We found that the carbon layer leads to higher maximum current densities and higher maximum open-circuit voltages and thus higher maximum efficiencies (6.0% with carbon layer compared to 5.6% without for 250 nm CIGS thickness).
Keywords
carbon; copper compounds; current density; evaporation; gallium compounds; indium compounds; molybdenum; solar cells; ternary semiconductors; C-Mo; CIGS solar cells; CuInGaSe2; Mo; additional carbon layer; current densities; molybdenum back contact; open circuit voltages; solar cells co-evaporation; thin absorber layers; Data analysis; Degradation; Energy measurement; Photovoltaic cells; Photovoltaic systems; Power measurement; Silicon; Solar power generation; System testing; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference (PVSC), 2009 34th IEEE
Conference_Location
Philadelphia, PA
ISSN
0160-8371
Print_ISBN
978-1-4244-2949-3
Electronic_ISBN
0160-8371
Type
conf
DOI
10.1109/PVSC.2009.5411171
Filename
5411171
Link To Document