• DocumentCode
    3439194
  • Title

    CIGS solar cells with very thin absorber layers

  • Author

    Haug, Veronika ; Quintilla, Aina ; Ahlswede, Erik

  • Author_Institution
    Zentrum fur Sonnenenergie- und Wasserstoff-Forschung (ZSW), Stuttgart, Germany
  • fYear
    2009
  • fDate
    7-12 June 2009
  • Abstract
    An additional carbon layer between Cu(In,Ga)Se2 (CIGS) layer and molybdenum (Mo) back contact can increase the efficiency of solar cells with very thin absorber layers. In this study the so produced solar cells co-evaporated on top of a carbon layer are compared with cells co-evaporated directly on molybdenum. We found that the carbon layer leads to higher maximum current densities and higher maximum open-circuit voltages and thus higher maximum efficiencies (6.0% with carbon layer compared to 5.6% without for 250 nm CIGS thickness).
  • Keywords
    carbon; copper compounds; current density; evaporation; gallium compounds; indium compounds; molybdenum; solar cells; ternary semiconductors; C-Mo; CIGS solar cells; CuInGaSe2; Mo; additional carbon layer; current densities; molybdenum back contact; open circuit voltages; solar cells co-evaporation; thin absorber layers; Data analysis; Degradation; Energy measurement; Photovoltaic cells; Photovoltaic systems; Power measurement; Silicon; Solar power generation; System testing; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference (PVSC), 2009 34th IEEE
  • Conference_Location
    Philadelphia, PA
  • ISSN
    0160-8371
  • Print_ISBN
    978-1-4244-2949-3
  • Electronic_ISBN
    0160-8371
  • Type

    conf

  • DOI
    10.1109/PVSC.2009.5411171
  • Filename
    5411171