• DocumentCode
    3439207
  • Title

    X-Ray Luminescence in ZnIn2S4, CdGa2S4 and Zn3In2S6

  • Author

    Machuga, A. ; Radu, R. ; Pintea, V. ; Arama, E. ; Zhitar, V. ; Shemyakova, T.

  • Author_Institution
    Tech. Univ. of Moldova, Chisinau
  • Volume
    2
  • fYear
    2007
  • fDate
    Oct. 15 2007-Sept. 17 2007
  • Firstpage
    377
  • Lastpage
    380
  • Abstract
    Results related to investigation of X-ray induced luminescence spectra in ZnIn2S4, CdGa2S4 and Zn3In2S6 single crystals measured at 300 and 80 K are presented. The spectra mainly consist of one band with maximum at 1.67 and 1.97 eV (80 K), respectively, generated due to donor-acceptor recombination.
  • Keywords
    X-ray emission spectra; cadmium compounds; conduction bands; electron-hole recombination; gallium compounds; indium compounds; luminescence; ternary semiconductors; wide band gap semiconductors; zinc compounds; CdGa2S4; X-ray induced luminescence spectra; Zn3In2S6; ZnIn2S4; chemical transport reaction method; conduction band; donor-acceptor recombination; single crystals; temperature 300 K; temperature 80 K; Anodes; Conducting materials; Crystalline materials; Crystals; Luminescence; Medical tests; Power supplies; Temperature; Voltage; Wideband;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Conference, 2007. CAS 2007. International
  • Conference_Location
    Sinaia
  • ISSN
    1545-827X
  • Print_ISBN
    978-1-4244-0847-4
  • Type

    conf

  • DOI
    10.1109/SMICND.2007.4519739
  • Filename
    4519739