Title :
Nano-Metrology between Necessity and Reality
Author :
Apostol, D. ; Logofatu, P.C. ; Muller, Raluca
Author_Institution :
Lasers Dept., Nat. Inst. for Laser Plasma & Radiat. Phys., Magurele
fDate :
Oct. 15 2007-Sept. 17 2007
Abstract :
Microscopes (optical, scanning probe, atomic force, WLI, SNOM, confocal) are being increasingly used as metrology tools in industrial applications, thus driving an increasing demand for accuracy in these instruments. Some properties commonly measured in nanotechnologies are feature spacing (pitch), feature height (or depth), feature width (critical dimension), and surface roughness. To achieve high accuracy in all these measurements, the scales of an instrument should be calibrated. A quasi-generalized confusion between resolution and accuracy makes researchers not habituated to measurement to use high resolution instruments in improper conditions and report results with too many significant (?!) digits. The last digit must be not the resolution but the one indicated by the uncertainty of measurement. As a rule for the commercial instruments used for observation in nanosciences and nanotechnologies, their intrinsic accuracy is not indicated, but only the resolution. Necessary commentaries regarding nanometrology are presented in this paper.
Keywords :
atomic force microscopy; calibration; light interferometry; nanotechnology; near-field scanning optical microscopy; semiconductor technology; spatial variables measurement; surface roughness; SNOM; WLI; atomic force microscoppy; calibration; confocal microscopy; critical dimension; depth; feature height; feature spacing; feature width; laser interferometer; measurement accuracy; metrology; nanometrology; nanotechnology; pitch; resolution; scanning near field optical microscopy; scanning probe microscopy; surface roughness; white light interferometry; Atom optics; Atomic force microscopy; Atomic measurements; Instruments; Measurement uncertainty; Metrology; Optical microscopy; Probes; Rough surfaces; Surface roughness; accuracy; nanometrology; resolution;
Conference_Titel :
Semiconductor Conference, 2007. CAS 2007. International
Conference_Location :
Sinaia
Print_ISBN :
978-1-4244-0847-4
DOI :
10.1109/SMICND.2007.4519740