Title :
One Dimensional Model for the Duration of the High Breakdown Phase in Deep Depletion Power Devices
Author_Institution :
Dept. of Electron. & Telecommun. Eng., Univ. of Napoli Federico II, Naples
fDate :
Oct. 15 2007-Sept. 17 2007
Abstract :
The paper presents a one dimensional model of the duration of the increased breakdown voltage phase in deep depletion power devices. The model includes the effect of bulk generation and space charge generation and is verified against numerical simulations of a Si-BOX-Si structure. The model is compared with experimental results regarding the duration of the increased breakdown voltage phase in a power LDMOS in SOI technology. The results show that the interface states are probably the limiting factor for the duration of the increased breakdown voltage phase.
Keywords :
interface states; power MOSFET; semiconductor device breakdown; semiconductor device models; silicon-on-insulator; LDMOS; SOI technology; Si; Si-BOX-Si structure; bulk generation effect; deep depletion power devices; high breakdown voltage phase duration; interface states; one dimensional model; space charge generation; Breakdown voltage; Electric breakdown; Electronic mail; Interface states; Numerical simulation; Power engineering and energy; Semiconductor process modeling; Silicon on insulator technology; Space charge; Space technology; Deep Depletion; Lateral power MOS; carrier lifetime; silicon on insulator (SOI) technology;
Conference_Titel :
Semiconductor Conference, 2007. CAS 2007. International
Conference_Location :
Sinaia
Print_ISBN :
978-1-4244-0847-4
DOI :
10.1109/SMICND.2007.4519744
