Title :
Highly piezoelectric boundary waves in Si/SiO2/LiNbO3 structure
Author :
Yamaguchi, Masatsune ; Yamashita, Takashi ; Hashimoto, Ken-Ya ; Omori, Tatsuya
Author_Institution :
Dept. of Electron. & Mech. Eng., Chiba Univ., Japan
Abstract :
It is theoretically shown that highly piezoelectric boundary waves are propagated in various structures based on the combination of Si/SiO 2/LiNbO3, and that the range of existence of these boundary waves is quite large. The non-leaky boundary waves propagating in [001]-Si-⟨100⟩/SiO2/YX-LiNbO3 structure with SiO2 thickness of 0.8λ possess an electromechanical coupling factor of 12% and temperature coefficient of velocity of 15 ppm/°C, and are found to be applicable to practical devices. In particular, because of the very confined energy distribution close to the SiO2/LiNbO3 boundary, devices employing the structure need Si and LiNbO3 substrates of only a few wavelength thickness. This suggests that devices could be developed by various methods such as wafer bonding and thin film deposition techniques
Keywords :
lithium compounds; piezoelectric materials; silicon; silicon compounds; surface acoustic wave devices; surface acoustic waves; LiNbO3; SAW devices; SH-type waves; Si-SiO2-LiNbO3; Si/SiO2/LiNbO3 structure; electromechanical coupling factor; highly piezoelectric boundary waves; nonleaky boundary waves; temperature coefficient of velocity; thin film deposition; very confined energy distribution; wafer bonding; Acoustic waves; Conductivity; Electrons; Packaging; Sputtering; Substrates; Surface acoustic wave devices; Surface acoustic waves; Temperature; Wafer bonding;
Conference_Titel :
Frequency Control Symposium, 1998. Proceedings of the 1998 IEEE International
Conference_Location :
Pasadena, CA
Print_ISBN :
0-7803-4373-5
DOI :
10.1109/FREQ.1998.717942
