Real-time study of strain relaxation in lattice-mismatched InGaAs/GaAs by x-ray diffraction

Author

Sasaki, Takuo ; Suzuki, Hidetoshi ; Sai, Akihisa ; Lee, Jong-Han ; Takahasi, Masamitu ; Fujikawa, Seiji ; Arafune, Koji ; Kamiya, Itaru ; Ohshita, Yoshio ; Yamaguchi, Masafumi

Author_Institution

Depertment of Eng., Toyota Technol. Inst., Nagoya, Japan

fYear

2009

fDate

7-12 June 2009

Abstract

In situ real-time X-ray diffraction measurements during In_0.12Ga_0.88As/GaAs(001) epitaxial growth are performed for the first time to understand the strain relaxation mechanisms in a lattice-mismatched system. The reciprocal space maps of 004 diffractions are obtained, and allow us to evaluate the evolution of residual strain and crystal quality simultaneously as a function of layer thickness. In the time evolution, we have classified five thickness ranges, and deduced the dominant dislocation behavior in each phase.

Keywords

III-V semiconductors; X-ray diffraction; crystal structure; dislocations; epitaxial growth; gallium arsenide; indium compounds; semiconductor epitaxial layers; semiconductor growth; stress relaxation; InGaAs-GaAs; X-ray diffraction; crystal quality; dominant dislocation; epitaxial growth; lattice mismatched system; real time study; residual strain; strain relaxation; Capacitive sensors; Conductive films; Conductivity; Epitaxial growth; Gallium arsenide; Glass; Indium gallium arsenide; Substrates; X-ray diffraction; X-ray scattering;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference (PVSC), 2009 34th IEEE

Conference_Location

Philadelphia, PA

ISSN

0160-8371

Print_ISBN

978-1-4244-2949-3

Electronic_ISBN

0160-8371

Type

conf

DOI

10.1109/PVSC.2009.5411191

Filename

5411191