Title :
Calculation of the Depletion Region Width and Barrier Capacitance of Diffused Semiconductor Junctions with Application to Reach-Through Breakdown Voltage of Semiconductor Devices with Diffused Base
Author :
Cristea, Miron J.
Author_Institution :
Fac. of Electron., Telecomm. & Inf. Technol., Politeh. Univ. of Bucharest, Bucharest
fDate :
Oct. 15 2007-Sept. 17 2007
Abstract :
Based on new fundamental equations, the calculation of the depletion region width and barrier capacitance of practical diffused semiconductor junctions was achieved for the first time in this work. The obtained formulas are valid for p-n junctions, Schottky junctions, hetero-junctions and other types of semiconductor junctions. As application, an analytical formula for the reach-through breakdown voltage of PT- (punch-through) IGBTs, asymmetric thyristors and bipolar transistors with diffused base is presented for the first time.
Keywords :
insulated gate bipolar transistors; p-n junctions; semiconductor heterojunctions; PT-IGBT; Schottky junctions; asymmetric thyristors; barrier capacitance; bipolar transistors; depletion region width; diffused base; diffused semiconductor junctions; hetero-junctions; p-n junctions; punch-through IGBT; reach-through breakdown voltage; Capacitance; Gaussian processes; Integral equations; P-n junctions; Permittivity; Poisson equations; Semiconductor devices; Space charge; Thyristors; Writing;
Conference_Titel :
Semiconductor Conference, 2007. CAS 2007. International
Conference_Location :
Sinaia
Print_ISBN :
978-1-4244-0847-4
DOI :
10.1109/SMICND.2007.4519765
