CMOS Differential Structure with Improved Linearity and Increased Frequency Response

Author

Popa, C. ; Manolescu, A.M.

Author_Institution

Telecommun. & Inf. Technol., Univ. Politeh. of Bucharest, Bucharest

Volume

2

fYear

2007

fDate

Oct. 15 2007-Sept. 17 2007

Firstpage

517

Lastpage

520

Abstract

An original differential structure using exclusively MOS devices working in the saturation region will be further presented. Performing the great advantage of an excellent linearity, obtained by a proper biasing of the differential core (using original translation and arithmetical mean blocks), the proposed circuit is designed for low-voltage low- power operation. The estimated linearity is obtained for an extended range of the differential input voltage and in the worst case of considering second-order effects that affect MOS transistors operation. The frequency response of the new differential structure is strongly increased by operating all MOS devices in the saturation region. The circuit is implemented in 0.35 mum CMOS technology, SPICE simulations confirming the theoretical estimated results.

Keywords

CMOS integrated circuits; MIS devices; SPICE; frequency response; CMOS differential structure; MOS devices; SPICE simulations; arithmetical mean blocks; differential structure; frequency response; low-voltage low- power operation; second-order effects; CMOS technology; Circuits; Differential amplifiers; Frequency response; Information technology; Linearity; MOS devices; MOSFETs; Operational amplifiers; Voltage; VLSI design; differential structure; linearity;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference, 2007. CAS 2007. International

Conference_Location

Sinaia

ISSN

1545-827X

Print_ISBN

978-1-4244-0847-4

Type

conf

DOI

10.1109/SMICND.2007.4519774

Filename

4519774