Design techniques for highly efficient class-F amplifiers driven by low voltage supplies

Author

Pedro, José Carlos ; Gomes, Luís Ramos ; Carvalho, Nuno Borges

Author_Institution

Inst. de Telecomunicacoes, Aveiro Univ., Portugal

Volume

3

fYear

1998

fDate

1998

Firstpage

201

Abstract

The present paper provides design techniques for highly efficient microwave power amplifiers driven by low voltage power supplies. Main power amplifier design variables, such as conduction angle and fundamental and harmonic load impedance terminations, are studied, to enable the selection of the optimum parameter set under small voltage operating conditions. Theoretical predicted conclusions are then validated with a practical S-band GaAs monolithic microwave integrated circuit, MMIC, class-F power amplifier

Keywords

III-V semiconductors; MESFET integrated circuits; MMIC power amplifiers; UHF integrated circuits; UHF power amplifiers; circuit optimisation; field effect MMIC; gallium arsenide; integrated circuit design; low-power electronics; GaAs; III-V semiconductors; MESFETs; S-band; class-F power amplifier; conduction angle; design techniques; fundamental load impedance terminations; harmonic load impedance terminations; low voltage supplies; monolithic microwave integrated circuit; optimum parameter set; power amplifier design variables; voltage operating conditions; Gallium arsenide; High power amplifiers; Impedance; Low voltage; MMICs; Microwave amplifiers; Microwave theory and techniques; Power amplifiers; Power supplies; Power system harmonics;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronics, Circuits and Systems, 1998 IEEE International Conference on

Conference_Location

Lisboa

Print_ISBN

0-7803-5008-1

Type

conf

DOI

10.1109/ICECS.1998.813967

Filename

813967