Title :
A mm-wave Gunn diode with an induced channel in active region
Author :
Arkusha, Yu V. ; Prokhorov, E.D. ; Storozhenko, I.P.
Author_Institution :
Karazin Kharkov Nat. Univ., Ukraine
Abstract :
In work the mathematical modeling of the GaAs Gunn diode submicrometer of length with inducing by the channel in active region was carried out. The target characteristics and basic physical phenomena proceeding in the given diode were investigated. The carried out researches have shown, that the Gunn diode with inducing by the channel in active region is a perspective solid-state active element in a mm-waves
Keywords :
Gunn diodes; III-V semiconductors; gallium arsenide; millimetre wave diodes; semiconductor device models; GaAs; MM-wave GaAs Gunn diode; active region; induced channel; mathematical model; solid-state active element; Cathodes; Conductivity; Diodes; Electron mobility; Gallium arsenide; Gunn devices; Heterojunctions; Impurities; Mathematical model; Voltage;
Conference_Titel :
Physics and Engineering of Millimeter and Sub-Millimeter Waves, 2001. The Fourth International Kharkov Symposium on
Conference_Location :
Kharkov
Print_ISBN :
0-7803-6473-2
DOI :
10.1109/MSMW.2001.947306
