DocumentCode
3439831
Title
A mm-wave Gunn diode with an induced channel in active region
Author
Arkusha, Yu V. ; Prokhorov, E.D. ; Storozhenko, I.P.
Author_Institution
Karazin Kharkov Nat. Univ., Ukraine
Volume
2
fYear
2001
fDate
2001
Firstpage
771
Abstract
In work the mathematical modeling of the GaAs Gunn diode submicrometer of length with inducing by the channel in active region was carried out. The target characteristics and basic physical phenomena proceeding in the given diode were investigated. The carried out researches have shown, that the Gunn diode with inducing by the channel in active region is a perspective solid-state active element in a mm-waves
Keywords
Gunn diodes; III-V semiconductors; gallium arsenide; millimetre wave diodes; semiconductor device models; GaAs; MM-wave GaAs Gunn diode; active region; induced channel; mathematical model; solid-state active element; Cathodes; Conductivity; Diodes; Electron mobility; Gallium arsenide; Gunn devices; Heterojunctions; Impurities; Mathematical model; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Physics and Engineering of Millimeter and Sub-Millimeter Waves, 2001. The Fourth International Kharkov Symposium on
Conference_Location
Kharkov
Print_ISBN
0-7803-6473-2
Type
conf
DOI
10.1109/MSMW.2001.947306
Filename
947306
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