DocumentCode :
3439839
Title :
Application of a New Body Contact to SOI LDMOSFET Devices, Three-Dimesnional Simulation
Author :
Daghighi, Arash ; Osman, Mohamed A.
Author_Institution :
Dept. of Electr. Eng., Islamic Azad Univ. Majlesi Branch, Isfahan
Volume :
2
fYear :
2007
fDate :
Oct. 15 2007-Sept. 17 2007
Firstpage :
529
Lastpage :
532
Abstract :
Application of a new area efficient body contact to LDMOSFET devices in silicon-on-insulator (SOI) material has been investigated using three-dimensional simulation. A comparative study of the new body contact and a conventional body-contacted structure for high voltage SOI devices is presented. Using the new body contact, current drive (IDS) was increased by 14% and current gain cut-off frequency (fT) by 10%. In addition, improved performance is achieved when comparing on-resistance (Ron) and breakdown voltage (VBR). The new body contact structure is applicable to both high-voltage planar or trench SOI and bulk devices.
Keywords :
MOSFET; silicon-on-insulator; 3D simulation; LDMOSFET devices; body contact; bulk devices; current drive; silicon-on-insulator material; Computational modeling; Contacts; Dielectric substrates; Immune system; Inductors; Isothermal processes; MOSFETs; Radio frequency; Silicon; Voltage; Body contact; Breakdown voltage; Floating body effects; On-resistance; SOI LDMOSFET; Three-dimensional simulation; isothermal drift-diffusion model;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Conference, 2007. CAS 2007. International
Conference_Location :
Sinaia
ISSN :
1545-827X
Print_ISBN :
978-1-4244-0847-4
Type :
conf
DOI :
10.1109/SMICND.2007.4519777
Filename :
4519777
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3439839
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