Title :
Reverse-biased GaAs- and Si-pnipn structures for semiconductor devices
Author_Institution :
Inst. of Radiophys. & Electron., Acad. of Sci., Kharkov, Ukraine
Abstract :
Research on the properties of reverse-biased pnipn structures with the aim of the creation of new semiconductor devices based on these structures is urgent. The present work is dedicated to this problem. As a mathematical model for the study of reverse-biased pnipn structures, the drift-diffusion model was used, which adequately describes the isothermal processes in semiconductors. The solution of the equations of this model is executed by the finite-difference methods for semiconductor structures with abrupt p-n junctions
Keywords :
III-V semiconductors; elemental semiconductors; finite difference methods; gallium arsenide; p-n junctions; semiconductor device models; silicon; GaAs; GaAs structures; Si; Si structures; abrupt p-n junctions; drift-diffusion model; finite-difference methods; isothermal processes; mathematical model; reverse-biased p-n-i-p-n structures; semiconductor devices; Charge carrier processes; Current density; Equations; Finite difference methods; Frequency synchronization; Impurities; Isothermal processes; Mathematical model; P-n junctions; Semiconductor devices;
Conference_Titel :
Physics and Engineering of Millimeter and Sub-Millimeter Waves, 2001. The Fourth International Kharkov Symposium on
Conference_Location :
Kharkov
Print_ISBN :
0-7803-6473-2
DOI :
10.1109/MSMW.2001.947307
