Static electrical fields of reverse-biased GaAs- and Ge-pnipn structures

The possibility of creating various semiconductor devices based on a reverse-biased semiconductor pnipn structure has been shown previously. It has been suggested that such a structure could be used for high energy particle detectors and chaotic generators. In these works the analysis of spatial-temporal dynamics of currents using the simplified model based on a phenomena approach was carried out. The modeling of the real physical process in a pnipn structure receiving external charge carriers (electrons) into a layer of multiplication of one of p-n junctions, was executed. However, previously the electrical field, which determines the shock ionization in p-n junctions and drift movement of charge carriers in i-region, was not strictly calculated. Therefore a problem in the creation of such devices remained open, as the geometrical parameters of the pnipn structure were not designed. In the present work an account of the electrical field is given and the parameters of GaAs- and Ge- pnipn structures are determined for p-n junctions of a particular geometry